ID 原文 译文
43056 随着超大规模集成 ( VLSI) 电路的发展，芯片结构及工艺变得日益复杂，同时给失效分析工作带来了挑战。 With the development of very large scale integration (VLSI) circuit, structures andprocess of the chip have become more and more complex, which brings challenges to the failure analysis.
43057 内嵌式存储器作为片上系统 ( SOC) 内部模块的重要组成部分，其具有结构复杂、密度高等特点，常规的失效分析手段难以准确定位其失效模式和机理。 As an important part of the system on chip (SOC) internal module, the embedded memory has thecharacteristics of complex structure and high density, and it is difficult to accurately locate the failuremode and mechanism of the embedded memory with the conventional failure analysis method.
43058 介绍了红外发光显微镜 ( EMMI) 、电压衬度 ( VC) 、去层、聚焦离子束 ( FIB) 的分析原理及组合失效分析技术。 The analysisprinciple and the combined failure analysis technology were introduced, such as the infrared emission microscopy (EMMI) , voltage contrast (VC) , de-layering and focused ion beam (FIB) .
43059 针对传统分析手段的不足及局限性，提出了采用一种选择性刻蚀方法对栅氧化层的微小缺陷进行定位与分析。 In view of thedisadvantages and limitations of traditional analysis methods, a selective etching method was proposed tolocate and analyze the tiny defects of the gate-oxide layer.
43060 研究结果表明，该方法对分析栅氧化层击穿等缺陷损伤具有明显的优势，可以减少分析时间并提高失效分析成功率。 The research results show that the method hasobvious advantages for defect damage such as gate-oxide layer breakdown, which can reduce the analysistime and improve the success rate of failure analysis.
43061 对一种功率运算放大器的失效问题进行了研究并分析了失效机理。 The failure problem of a power operational amplifier was studied and the failure mechanismwas analyzed.
43062 功率运算放大器在测试时发生失效，同时，－20 V 供电电源电压在加电过程中存在波动。 The power operational amplifier failed during the test, and the －20 V supply voltage fluctuated during power-on process.
43063 通过内部目检发现失效芯片内部驱动晶体管及相连的金属均存在过流烧毁形貌。 Through the internal inspection, it was found that the driving transistor andthe connected metal inside the failure chip have over current burnout appearance.
43064 对失效功率运算放大器和良好功率运算放大器进行红外热成像分析，失效器件的温升总体比台温高 10 ℃。 Infrared thermal imaginganalysis of the failure power operational amplifier and the good power operational amplifier was carried out, which demonstrated that the total temperature raise of the failure device was 10 ℃ higher than that of thetest machine.
43065 通过失效分析，供电电源发生快速突跳导致了功率运算放大器内的晶体管在导通和关断之间快速切换形成热量累积效应，从而导致器件烧毁，造成功率运算放大器过流失效。 Based on the failure analysis, the failure of the power operational amplifier was caused byfast hop of the supply power.The fast hop caused fast switching of the transistor of the power operationalamplifier, forming heat accumulation that was the reason of the burnout.