ID 原文 译文
43046 根据 DMA 在数据传输应用中的特性，减小了外部设备之间数据大量交互对 CPU 产生的负担，同时解决了处理器内部总线 ( PLB) 上 128 bit 数据与片上外围总线 ( OPB) 上 32 bit 数据之间的传输问题，实现 PLB与 OPB 上外部设备之间数据的双向传输。 According to the characteristics of DMA in data transmission application, the burden of large amount of data interaction betweenperipherals on CPU was reduced, the transmission problem between 128 bit data on process local bus(PLB) and 32 bit data on on-chip peripheral bus (OPB) was solved, and the bidirectional data transmission between PLB and peripherals on OPB was realized.
43047 最后给出了相应的功能仿真结果与现场可编程门阵列( FPGA) 验证结果。 Finally, the corresponding functional simulation results and field programmable gate array (FPGA) verification results were given
43048 采用直流反应磁控溅射制备出的氧化铝质子导体作为栅介质，采用射频磁控溅射制备的铟镓锌氧 ( IGZO) 和铟锌氧 ( IZO) 分别作为沟道和源漏电极，得到了由溅射方法制备的氧化物双电层薄膜晶体管 ( TFT) 。 Oxide based electric double-layer thin film transistors (TFTs) were fabricated using thesputtering technique with the alumina proton conductor deposited by DC-reactive sputtering as the gatedielectric, and the indium gallium zinc oxide (IGZO) and indium zinc oxide (IZO) fabricated by ＲFmagnetron sputtering as the semiconductor channel and conductive electrodes, respectively.
43049 对氧化铝栅介质的基本性质进行了表征，论证了氧化铝栅介质厚度与漏电流之间的关系， Basic properties of the alumina dielectric were characterized, and the relationship between the alumina dielectricthickness and the leakage current density was demonstrated.
43050 得出随着栅介质厚度的增加，电场强度下降，离子漏电流也有所下降的结论; It is concluded that with the increase of thegate dielectric thickness, the electric field strength and the ion leakage current decreases, respectively.
43051 并对双电层 TFT 进行了特性曲线测试， Characteristic curve measurements of the electric double-layer TFTs were carried out.
43052 在栅压为－1 ～ 2 V 时获得的开关比为 3. 6×104，迁移率为 15. 5 cm2·V－1·s－1。 The results showthat the on /off ratio is 3.6×104 and the mobility is 15.5 cm2·V－1·s－1 in the gate voltage range of－1－2 V.
43053 最后通过改变测试环境的相对湿度，测试了双电层 TFT 的湿度稳定性， Finally, the humidity stability of the electric double-layer TFT was tested by changing the relative humidity of the testing environment.
43054 发现其转移特性曲线中的源漏电流随着湿度的下降总体上呈现下降趋势， It is found that the source-drain current in transfer characteristic curves decreases with the decreasing of humidity.
43055 并分析论证了该类器件性能参数受湿度影响的机理。 The corresponding mechanism of the humidity impactson this type of device was analyzed.