ID 原文 译文
43036 实验表明，当样品中非晶层的占比超过 0. 66 时，其在 TEM 下的成像为非晶像; The experiments show that when the proportion of the amorphouslayer in the sample is more than 0.66, the imaging by using TEM is an amorphous image.
43037 当低于这一数值时，其在 TEM 下的成像为晶格像。 When it islower than 0.66, the imaging by using TEM is a lattice image.
43038 针对非晶层对样品成像的影响，使用了一种低电压减薄的制备方法，通过降低非晶层占比可以显著优化表面成像，提高 TEM 样品的质量。 Aiming at the effect of the amorphouslayer on sample imaging, applying a low voltage thinning preparation method can reduce the proportion of the amorphous layer to optimize surface imaging and improve the qualities of TEM samples.
43039 钴 ( Co) 具有电阻率低、电子迁移率高、对铜 ( Cu) 等金属的黏附性好以及沉积性能好等优势，在集成电路制程中作为 Cu 互连阻挡层或新型互连材料具有巨大的应用潜力， Cobalt (Co) has a great application potential as a copper (Cu) interconnection barrierlayer or a new interconnection material in integrated circuit manufacturing for the advantages of low resistivity, high electron mobility, good adhesion to Cu and good deposition performance.
43040 而金属互连化学机械抛光 ( CMP) 是决定 Co 在集成电路应用中可靠性的关键工艺。 Chemical mechanical polishing (CMP) of metal interconnection is the key process to determine the reliability of Co in integrated circuit applications.
43041 概述了抛光液中的不同化学添加剂提高 Co 抛光性能的研究进展，重点介绍了氧化剂、络合剂、腐蚀抑制剂等化学添加剂对 Co 阻挡层和 Co 互连 CMP 的材料去除速率 ( MＲＲ) 、静态腐蚀速率 ( SEＲ) 、去除速率选择比以及电偶腐蚀的影响。 The research progress of different chemical additives in slurries to improve thepolishing performance of Co is reviewed.The effects of chemical additives such as oxidants, complexingagents, corrosion inhibitors on the material removal rate (MＲＲ) , static etching rate (SEＲ) , removalrate selectivity and galvanic corrosion of Co barrier layer and Co interconnect CMP are emphatically introduced.
43042 讨论了化学添加剂对提高 Co 抛光性能的作用机理，并分析了加入不同化学添加剂的抛光液的优势与不足。 The mechanism of chemical additives to improve the polishing performance of Co is discussed, and the advantages and disadvantages of slurries with different chemical additives are also analyzed.
43043 此外，展望了 Co 阻挡层和互连材料 CMP 工艺中仍需进一步研究的问题。 In addition, the problems that need further research in the study of CMP process of Co used in barrier layeror interconnection material are prospected.
43044 随着片上系统 ( SOC) 规模的不断增大，各外部设备之间大量数据的交互问题成为芯片系统提高性能的瓶颈。 With the increasing scale of system on chip (SOC) , the large amounts of data interaction between peripherals becomes the bottleneck of chip system improvement.
43045 提出了一种基于 CoreConnect 总线架构的直接内存存取 ( DMA) 高速数据传输系统设计方法，并给出了一种较为完善的 DMA 控制器设计方案。 A design method for directmemory access (DMA) high-speed data transmission system based on CoreConnect bus architecture wasproposed, and a relatively perfect DMA controller design scheme was presented.