ID 原文 译文
43026 其中一些二维材料的光电性质与其自身厚度有很大的关系，通过改变厚度可以获得不同的材料特性，从而极大地增加了二维材料在光电子器件中的应用。 The optoelectronic properties have a great relationship with their thicknesses, and different materials properties can be obtained by changing thethicknesses which can be greatly used in optoelectronic devices.
43027 综述了几种二维材料在光电探测器领域的研究进展， The research progress of several two-dimensional materials in the field of photodetectors is reviewed.
43028 介绍了石墨烯、过渡金属硫化物、黑磷以及二维钙钛矿 4 种二维材料的性质及制备方法，包括剥离法、沉积法和溶液法。 The properties and preparation methods of graphene, transition metal sulfide, black phosphorus and two-dimensional perovskite are introduced, including stripping method, deposition method and solution method.
43029 详细介绍了基于上述 4 种材料的光电探测器以及 4 种材料间相互异质结构的光电探测器的研究现状。 The research progress of photodetectors based on the four kinds of materials is introduced in detail.Subsequently, a detailed introduction of the photo detector based on the heterostructures between these two-dimensional materials is presented.
43030 最后对二维材料光电探测器的发展前景进行了展望。 At last, the development prospect of two-dimensional material-based photodetectors is prospected.
43031 研究了非晶层占比对半导体器件透射电子显微镜 ( TEM) 样品成像的影响。 The effect of the proportion of the amorphous layer on the imaging quality of the semiconductor device transmission electron microscope (TEM) sample was studied.
43032 聚焦离子束 ( FIB) 是制备 TEM 样品的重要工具， Focused ion beam (FIB) is avery important instrument for the preparation of TEM samples.
43033 在 TEM 样品制备过程中，离子束损伤会在样品表面产生非晶层而使 TEM 图像产生畸变失真。 During the preparation of the TEM sample, ion beam damage will produce the amorphous layer on the surface of the sample and distortion of the TEMimage.
43034 在 28 nm 技术节点以下半导体器件 TEM 样品制备中，传统的制备方法会使样品在 TEM 下呈现非晶像或者图像质量不佳而不再适用。 In the preparation of TEM samples of semiconductor devices below the 28 nm technology node, the conventional preparation method is no longer applicable, which makes the sample amorphous or thepoor imaging quality.
43035 制备了一种楔形样品并使用平面转截面的样品制备方法研究了 TEM 呈晶格像时和非晶层临界占比的关系。 A wedge-shaped sample was prepared, and the relationship between the TEM presented lattice imaging and the critical ratio of the amorphous layer was studied by using a sample preparation method with a planar to transection.