ID 原文 译文
43006 该芯片具有噪声性能好、功耗低、增益高等优点，可以用于各类 GPS 和卫星导航终端。 The chip can be used in various GPS and satellite navigation terminals with good noiseperformance, low power consumption and high gain.
43007 根据纳米 MOSFET 的紧凑模型，采用 HSPICE 的蒙特卡罗分析方法，研究随机掺杂波动 ( ＲDF) 引起的纳米 MOSFET 模拟/射频性能包括栅极电容、截止频率、跨导和输出电导等参数的变化标准差， According to the compact model of nanometer MOSFETs, HSPICE Monte Carlo analysismethod was used to investigate the variation standard deviations of nanometer MOSFETs analog /ＲF performance parameters caused by random dopant fluctuation (ＲDF) .These parameters included gate capacitance, cutoff frequency, transconductance and output conductance.
43008 同时通过改变栅介质的介电常数 ( ε) 和等效氧化层厚度 ( dox ) ，观测其对ＲDF 引起的模拟/射频性能变化的影响。 Meanwhile, the effects of adjustingthe dielectric constant (ε) and the equivalent oxide layer thickness (dox) of the gate dielectric on theanalog /ＲF performance variations caused by ＲDF were observed.
43009 结果显示，ＲDF 引起的 MOSFET 模拟/射频性能参数变化表现出不同的特征，而在适当选择较高的 ε 和 dox情况下，ＲDF 引起的模拟/射频性能参数变化标准差有一定程度的减小 ( 绝对标准偏差整体降低到接近 0，相对标准偏差整体最大降低 10%) ，为通过改变等效栅介质抑制 ＲDF 的影响提供了实验依据。 The results show that ＲDF in MOSFETscauses different fluctuation characteristics with different parameters in analog /ＲF performance, and thestandard deviations of the analog /ＲF performance parameter variations caused by ＲDF can be reduced toa certain extend by appropriately choosing higher ε and dox (the absolute standard deviation as a whole isreduced to nearly 0, and the relative standard deviation is reduced by up to 10%) , which provides experimental evidence for suppressing ＲDF-induced variation by adjusting the equivalent gate dielectric
43010 进入 21 世纪后，GaN 微电子发展迅速，2011 年进入工程化。 After entering the 21st century, GaN microelectronics has developed rapidly, and in2011, GaN microelectronics turned into engineering.
43011 在 5G 移动通信等新一代应用的牵引下，GaN 微电子的创新更加活跃，正开始步入高新产业的发展阶段。 Under the traction of 5G mobile communication andother new generation applications, the innovation of GaN microelectronics is more active, and it is beginning to enter the development stage of the high-tech industry.
43012 介绍了 GaN微电子在新器件结构与工艺、微波混合集成、微波单片集成电路 ( MMIC) 、集成电路和异构集成等方面的最新进展，主要包括新的势垒结构、新的器件结构和工艺、大尺寸 Si 基器件、高导热金刚石基器件、新的电路拓扑、新的 3D 集成技术和可靠性研究等，以及在微波电子学和功率电子学两大应用领域的最新成果。 The latest progress of GaN microelectronicsis introduced in the new device structure and process, microwave hybrid integration, monolithicmicrowave integrated circuit (MMIC) , integrated circuits and heterogeneous integration and so on, including the new barrier, new device structure and process, devices on large size Si wafer, devices onhigh thermal conductivity diamond, new circuit topology, new 3D integration technology and reliabilityresearch, as well as the latest application achievements in the fields of microwave electronics and powerelectronics.
43013 分析和评价了 SiC 基、Si 基 GaN 微电子等的发展态势。 The development trends of SiC-based and Si-based GaN microelectronics are analyzedand evaluated.
43014 以二氧化钛 ( TiO2 ) 为衬底，利用分子束外延 ( MBE) 法制备了高质量的拓扑绝缘体硒化铋 ( Bi2 Se3 ) 薄膜。 A high-quality topological insulator bismuth selenide (Bi2 Se3) film was prepared by molecular beam epitaxy (MBE) method with titanium dioxide (TiO2) as substrate.
43015 实验中，Bi 与 Se 的流量比控制在 1 ∶ 10 左右，制得的薄膜厚度约为50 nm。 In the experiment, theBi / Se flow ratio was controlled at about 1 ∶ 10, and the film thickness was about 50 nm.