ID 原文 译文
42996 在长期演进 ( LTE) 9 dB 峰均比 ( PAＲ)信号输入下，发射通道平均承受功率可达 20 W。 The average transmission channel power can reach 20 W under the 9 dB long-term evolution (LTE) peak-average ratio(PAＲ) input signal.
42997 在 3. 5 GHz 芯片发射通道的插入损耗为0.49 dB，0. 1 dB 压缩点的输出功率为 47 dBm，隔离度为 38 dB。 The chip transmission channel has a low insertion loss of 0.49 dB, an output powerof 0.1 dB compression point of 47 dBm, and an isolation of 38 dB at 3.5 GHz.
42998 在 3. 5 GHz 芯片接收通道的插入损耗为 0. 43 dB，0. 1 dB 压缩点的输出功率为 31 dBm，隔离度为 38 dB。 The receive channel has alow insertion loss of 0.43 dB, an output power of 0.1 dB compression point of 31 dBm, and an isolationof 38 dB at 3.5 GHz.
42999 该射频开关芯片适用于 5G 移动通信 LTE 基站。 The ＲF switch is suitable for the 5G mobile communication LTE base stations.
43000 采用增强型 GaAs 赝配高电子迁移率晶体管 ( PHEMT) 工艺，设计了一款具有超低噪声系数、低功耗的放大器芯片。 An amplifier chip with ultra-low noise figure and low power consumption was designedwith enhanced GaAs pseudomorphic high electron mobility transistor (PHEMT) process.
43001 采用电流复用型共源结构，源极加入负反馈电感，输入级采用低损耗的片外匹配结构，降低了噪声系数，提高了增益。 The currentmultiplexing common source structure was adopted, the negative feedback inductor was connected to thesource, and the input stage was adopted with the low loss off-chip matching structure, which reduces thenoise figure and improves the gain.
43002 采用有源偏置电路，提高了芯片电流一致性。 The active bias circuit was adopted to improve the chip current consistency.
43003 设计过程中对封装管壳、键合丝等建模仿真，增益、噪声等测试结果与仿真结果基本一致。 During the design process, the packaged shell, bonding wire, etc. were modeled and simulated.And the gain and noise test results are basically consistent with the simulation results.
43004 该芯片采用 4. 0 mm×4. 0 mm×0. 8 mm 扁平无引线封装， The chip adopted a4.0 mm×4.0 mm×0.8 mm flat leadless package.
43005 芯片直流功耗仅为 36 mW，在卫星导航工作频段内增益大于 30 dB，噪声系数小于 0. 55 dB。 The DC power consumption of the chip is only 36 mW, the gain in the satellite navigation working frequency band is greater than 30 dB, and the noise figure isless than 0.55 dB.