ID 原文 译文
42976 对 β-Ga2O3 单晶的声子谱进行计算，并通过拉曼光谱测试进行了验证， The phonon spectrum of the β-Ga2O3single crystal was calculated and verified by Ｒaman spectroscopy test.
42977 对掺杂元素的取代位置进行了分析。 The substitution position of the doping element was analyzed.
42978 结果表明，掺杂元素会对拉曼峰强度产生显著影响，Si、Mg、Fe 均倾向于取代 GaⅡ O6 八面体中心的 GaⅡ 原子。 The results show that doping elements can greatly affect the intensity ofＲaman peaks and Si, Mg and Fe tend to replace the GaⅡ atom in the center of the GaⅡ O6 octahedron.
42979 根据电学性能测试结果，Si 掺杂会使 β-Ga2O3 单晶呈 n型导电，Mg 或 Fe 掺杂会使 β-Ga2O3 单晶呈半绝缘态。 According to the results of the electrical properties test, β-Ga2O3 single crystals present n-type conductionwith Si doping and semi-insulated state with Mg or Fe doping.
42980 高压大功率 IGBT 器件主要用于高压直流输电、轨道交通等领域。 High voltage and high power IGBTs are mainly used in high voltage direct current transmission, rail transit and other fields.
42981 为避免在工作中发生失效，此类器件在应用前需进行一系列可靠性测试，其中高温阻断 ( HTＲB) 试验是最重要的可靠性测试之一。 To avoid failure during operation, a series of reliability tests should beconducted before the application of such devices, among which the high temperature blocking (HTＲB) testis one of the most important reliability tests.
42982 针对高压大功率 IGBT 器件在 HTＲB 测试中漏电流过大导致结温高于环境温度的问题，为了避免错误的测试条件引起待测器件的意外失效， In the HTＲB test, due to the large leakage current, the junction temperature of high voltage and high power IGBTs is higher than the environment temperature.
42983 提出了一种高压大功率 IGBT 器件HTＲB 测试结温的检测方法。 A junction temperature detection method for high voltage and high power IGBTs in the HTＲB test was proposed to solve this problem and avoid accidental failure of the device under test for incorrect test conditions.
42984 使用自行搭建的 HTＲB 结温检测对比测试系统，在高压阻断状态下，利用集电极－发射极阻断漏电流作为热敏参数检测高压大功率 IGBT 器件的结温， With the self-built HTＲB junction temperature detection comparison test system, in the high voltage blocking state, the collector-emitter blocking leakage current was used as the thermal sensitive parameter to detect the junction temperature of high voltage and high power IGBTs.
42985 并与常用的通态压降－结温法进行了对比，验证了该方法的有效性和可行性。 The effectiveness and feasibility of thismethod were verified by comparing this method with the common on-state voltage drop junction temperaturemethod.