ID 原文 译文
42966 最后对 Si 基 GaN 外延晶圆、增强型 GaN 功率开关器件产业化等发展趋势进行了分析与展望。 Finally, the development trend of GaN-on-Si epitaxial wafers and the industrializationof enhancement mode GaN power switching devices are analyzed and prospected.
42967 IGBT 模块中材料的热特性和传导特性与内部温度场分布密切相关，但传统热网络模型往往忽略这一特性，造成结温估计出现偏差。 The thermal and conduction properties of materials in IGBT modules are closely relatedto the internal temperature field distribution, while traditional thermal network model tends to ignore thischaracteristic, causing deviations in junction temperature estimation.
42968 针对此问题提出了一种包含实时温度反馈修正的热网络模型， A thermal network model which contains the real-time temperature feedback correction was proposed to solve this problem.
42969 在考虑异质材料的热传导角度及导热系数等传热性质的差异性基础上，对热网络模型的 ＲC 参数进行了优化。 On the basis ofconsidering the difference in heat transfer properties of the heterogeneous material such as thermal conduction angle and thermal conductivity coefficients, the ＲC parameters of the thermal network model wereoptimized.
42970 本模型的电路仿真和迭代计算可直观反映热网络各节点温度和 ＲC 参数相互作用的动态过程，并与三维有限元仿真结果高度吻合。 The circuit simulation and iterative calculation of this model can directly reflect the dynamic process of interaction between temperature and ＲC parameters of each node of the thermal network, and itis highly consistent with the results of 3D finite element simulation.
42971 相较将材料传热参数固定的传统热网络模型而言，本方法不仅在结温估计方面更为精确，还可解决热网络对材料物理系数变化的实时响应需求， Compared with the traditional thermalnetwork model with fixed material thermal conduction parameters, this method is not only more accuratein junction temperature estimation, but also solves the real-time response requirement of the thermal network to the adaption of material physical coefficients.
42972 可应用于 IGBT 模块可靠性设计和检测。 Therefore, it can be applied in the reliability designand detection of IGBT modules.
42973 β-Ga2O3 单晶材料由于其优异的性能得到了广泛关注，但是对于其掺杂、能级、电学性能等方面的研究仍然比较欠缺。 β-Ga2O3 single crystals have received extensive attention for their excellent properties, but the research on their doping, energy levels and electrical properties is still lacking.
42974 采用导模法分别制备了非故意掺杂 β-Ga2O3 单晶和 Si /Mg /Fe掺杂的 β-Ga2O3 单晶， Unintentionally doped β-Ga2O3 single crystals and Si /Mg /Fe doped β-Ga2O3 single crystals were prepared by edgedefined film-fed growth method.
42975 对样品进行了拉曼光谱测试和电学性能测试，研究不同掺杂元素对拉曼光谱的影响。 The Ｒaman spectra and electrical properties of these samples were testedto explore the effect of different doping elements on Ｒaman spectra.