ID 原文 译文
42956 调 Q 光纤激光器在光纤传感、激光雷达、激光加工和光纤通信等众多方面有着广泛的应用。 The Q-switched fiber laser has been widely used in many applications such as fiber sensing, laser radar, laser processing and fiber communication.
42957 半导体量子点 ( QD) 由于具有较高的损伤阈值和宽光谱特性，是一种优良的可饱和吸收体 ( SA) ， Semiconductor quantum dots (QDs) are excellent saturable absorbers (SAs) due to their high damage threshold and wide spectral characteristics.
42958 但是目前制备发光中心波长为 1 550 nm 的 QD SA 依然是一个巨大的挑战。 However, it is still a great challenge to fabricate the QD SA with a luminescence center wavelength of1 550 nm.
42959 通过在分子束外延 ( MBE) 生长 InAs QD 过程中加入两次间断制备了 1 550 nm InAs/GaAs 量子点半导体可饱和吸收镜 ( QD-SESAM) ， The 1 550 nm InAs/GaAs quantum dot semiconductor saturable absorber mirror (QDSESAM) was fabricated, in which two steps growth interruption was introduced before and after InAs QDsmolecular beam epitaxy (MBE) growth.
42960 并通过构建光纤直线腔，研制出发光中心波长约为 1 550 nm 的被动调 Q 光纤激光器。 And a passively 1 550 nm Q-switched fiber laser with a luminescence central wavelength of about 1 550 nm was developed by constructing a fiber linear cavity.
42961 该激光器最大输出功率约为 2. 5 mW，实现了 55 kHz 的重复频率，同时达到了 1. 45 μs 的脉冲宽度和 45. 36 nJ 的单脉冲能量，表现出了 InAs/GaAs QD 材料在 1 550 nm 调Q 光纤激光器应用中的巨大潜力。 The laserexhibits the the maximum output power of about 2.5 mW, the repetition frequency of 55 kHz, the pulsewidth of 1.45 μs and the single pulse energy of 45.36 nJ, demonstrating the great potential of InAs/GaAs QD materials in the application of 1 550 nm Q-switched fiber lasers.
42962 第三代半导体材料氮化镓 ( GaN) 具有宽禁带、高临界击穿场强、高电子迁移率、高饱和电子漂移速度等优良特性，基于 GaN 材料的功率开关器件在高速、大功率领域具有广阔的应用前景。 The third-generation semiconductor material gallium nitride (GaN) has excellent properties such as wide bandgap, high critical breakdown field strength, high electron mobility and high saturated electron drift velocity.GaN materials based power switching devices have broad application prospectsin high-speed and high-power fields.
42963 概述了 GaN 功率开关器件的研究现状及最新进展。 The research status and latest development of GaN power switchingdevices are summarized.
42964 从材料外延与器件结构切入，详细介绍了 Si 基 GaN 外延晶圆、自支撑 GaN 垂直结构场效应晶体管 ( FET) 器件和增强型 GaN 功率器件的实现方法、结构设计及制备工艺研究等 GaN 功率器件热门研究方向。 From the material epitaxy and device structure, the realization methods, structure design and preparation process of GaN-on-Si epitaxial wafers, GaN-on-GaN vertical structurefield effect transistors (FETs) and enhancement mode GaN power devices and other popular research directions of GaN power devices are introduced in detail.
42965 讨论了 GaN 功率开关器件面临的挑战。 The challenges faced by GaN power switching devices are discussed.