ID 原文 译文
42936 采用 Cadence Spectre 软件的蒙特卡洛模型分别仿真了采样电路在－20，25 和 125 ℃下的掉电率， The Monte Carlo model of Cadence Spectre software was used to simulate the output droop rate at －20, 25 and 125 ℃, respectively.
42937 后仿真结果表明，室温下，在输入为 0～ 2 V、采用±5 V 电源供电时，采样保持电路掉电率为 0. 67 mV/ s，捕获时间为 3 μs，采样开关导通电阻为 1. 5～ 2. 5 kΩ，芯片面积为 195 μm×154 μm，整体功耗为 1. 106 mW。 The post-simulation results show that whenthe input is 0－2 V and the power supplies ±5 V at room temperature, the droop rate of the sample-and-holdcircuit maintains 0.67 mV/ s and the acquisition time is 3 μs, the on-resistance of the sampling switch is1.5－2.5 kΩ.The chip area is 195 μm×154 μm and the overall power consumption is 1.106 mW.
42938 为解决面向扫描电子显微镜 ( SEM) 的原位原子力显微镜 ( AFM) 工作时 SEM 的聚焦电子束引起原位 AFM 自感应压阻式微悬臂梁 ( PＲC) 力传感器读数持续漂移的难题，首先建立原位 AFM 自感应 PＲC 力传感器的 p 沟道结型场效应晶体管 ( JFET) 读数漂移模型，分析SEM 聚焦电子束对自感应 PＲC 产生干扰的原因; In order to solve the problem of continuous reading drift of in-situ atomic force microscope(AFM) self-sensing piezoresistive cantilever (PＲC) force sensor caused by focused electron beam of the scanning electron microscope (SEM) during the operation of in-situ AFM for the SEM, a p-channel junction field-effect transistor (JFET) of in-situ AFM self-sensing PＲC force sensor reading drift was modeledand the reason of the SEM focused electron beam causing interference for self-sensing PＲC was analyzed.
42939 然后提出了基于原位 AFM 自感应 PＲC 力传感器 p 沟道 JFET 模型的有源漂移抑制法， Then an active drift reduction method based on the p-channel JFET model of in-situ AFM self-sensing PＲCforce sensor was introduced.
42940 即先对自感应 PＲC 的栅极进行导电连接，再通过控制施加在自感应 PＲC 栅极上的补偿电压消除 SEM 聚焦电子束对自感应 PＲC 的干扰。 The interference of the SEM focused electron beam on the self-sensing PＲCwas eliminated by adding an extra conductive connection to the gate of the self-sensing PＲC and adjustingthe compensation voltage that applied to the gate of the self-sensing PＲC.
42941 实验结果表明，当补偿电压从未施加上升至 40 V 时，原位 AFM 自感应 PＲC 力传感器读数的漂移率从约 13 nm /min下降到 1 nm /min 左右，同时对自感应 PＲC 及其信号调理电路均无损伤。 The experimental results show that the drift rate of the in-situ AFM self-sensing PＲC force sensor is reduced from about 13 nm/min toabout 1 nm/min without any damage to the self-sensing PＲC and its signal conditioning circuit when thecompensation voltage increases from unapplied to 40 V.
42942 该方法能有效消除 SEM聚焦电子束对原位 AFM 自感应 PＲC 力传感器的影响。 Therefore, the active drift reduction method can effectively eliminate the influence of the SEM focused electron beam on the in-situ AFM self-sensing PＲCforce sensor.
42943 超高阻薄层硅外延片可用于制备光电探测器的二极管、瞬态电压抑制二极管等分立器件。 Ultra-high-resistance thin-layer silicon epitaxial wafers can be used in photodetectordiodes, transient voltage suppression diodes and other discrete devices.
42944 利用 E200 型单片外延炉在直径为 150 mm 的重掺 As 硅单晶衬底上制备了参数可控且均匀性高的外延层。 The epitaxial layer with controllable parameters and fine uniformity was manufactured by using E200 single wafer reactor on the heavilyAs-doped silicon single crystal substrate with a diameter of 150 mm.
42945 采用多次本征生长技术，在重掺 As 硅衬底边缘形成掺杂原子耗尽层，有效减少了重掺 As 硅衬底的自掺效应。 By adopting the key technique ofmultiple intrinsic growth, the doped atom depletion layer was formed at the edge of the heavily As-dopedsubstrate, and the self-doping effect of heavily As-doped substrate was effectively reduced.