ID 原文 译文
42926 分析铌酸锂的去除机理，并与传统抛光进行对比。 The removal mechanism of lithiumniobate wafer was analyzed.Then the experimental results were compared with those of the conventional polishing.
42927 结果表明:二氧化硅磨料和氧化剂对铌酸锂晶片抛光效果影响显著。 The results show that the major influences on the polishing effect of lithium niobate wafer aresilica abrasives and oxidants.
42928 当二氧化硅磨料质量分数为 20%、过氧化氢质量分数为 2. 5%、柠檬酸质量分数为 1. 6%、pH 值为 11 和聚乙烯吡咯烷酮质量分数为 0. 4%时，材料去除速率为401.52 nm /min，表面粗糙度为 1. 04 nm。 With a silica abrasive mass fraction of 20%, a hydrogen peroxide mass fraction of 2.5%, a citric acid mass fraction of 1.6%, a pH value of 11 and a polyvinylpyrrolidone massfraction of 0.4%, the material removal rate is 401.52 nm /min and the surface roughness is 1.04 nm.
42929 在相同的抛光工艺参数下，传统 CMP 的材料去除速率为 427. 68 nm /min，表面粗糙度为 1. 12 nm; With the same polishing process parameters, the material removal rate of conventional chemical mechanical polishing (CMP) is 427.68 nm /min and the surface roughness is 1.12 nm.
42930 超声精细雾化抛光效果与传统 CMP 效果相近，但雾化施液方式的抛光液用量低，是传统 CMP 的 1 /7。 The effect of ultrasonicfine atomization polishing is similar to that of conventional CMP, but the consumed quantity of ultrasonicfine atomization polishing slurry is only 1 /7 as much as that of the conventional CMP.
42931 设计了一种低掉电率、低功耗的采样保持电路。 A sample-and-hold circuit with low droop rate and low power consumption was designed.
42932 在电路保持阶段，将采样开关偏置在深积累区以减小亚阈值区电流， During the hold phase, the sampling switch was biased in the deep accumulation region to reduce the current of sub-threshold region.
42933 此时仍有源漏耦合电流，在采样开关源漏间加入高增益运算放大器，利用放大器的失调电压进行源漏耦合漏电补偿。 Due to the source-drain coupling current still exists, a high-gain operationalamplifier was inserted between the source and drain of the sampling switch to perform the source-drain coupling leakage compensation by using the offset voltage of the amplifier.
42934 考虑到失调电压的随机性，在采样开关源漏间并联一个体端偏置在高压的 PMOS 管以减小泄漏电流。 Considering the randomness of theoffset voltage, a PMOSFET which body biased at a high voltage was connected in parallel between thesource and drain of the sampling switch to reduce the leakage current.
42935 此外，对栅压自举开关进行了改进，对于不同的输入信号，利用运算放大器和逻辑控制单元，得到恒定的导通电阻。 In addition, the bootstrapped switchwas improved.For different input signals, a constant on-resistance was obtained by using the operationalamplifier and the logic control unit.