| ID | 原文 | 译文 |
| 42906 | 结果表明，仿真求解法得到的电阻值与实测电阻值更为接近，误差小于 5%，而传统估值法误差最高可达 30%。 | The results show that the resistance value obtained by the simulation method is closer tothe measured value.The error is less than 5%, while the maximum error of the conventional estimationmethod is up to 30%. |
| 42907 | 仿真求解法计算时间大大缩短，效率更高，还可观察线路的连通关系， | The calculation time of the simulation method is greatly shortened and the efficiency is higher.Besides, the line connection can also be observed. |
| 42908 | 错误率远低于传统估值算法。 | The error rate is much lower than that of the conventional estimation method. |
| 42909 | 该方法适用于陶瓷封装中不同类型和任意结构的阻值计算，通用性强。 | It is suitable for calculating the resistance of different types and arbitrary structures in ceramic packaging, and has a strong universality |
| 42910 | 在我国信息产业高速发展的今天，传统存储器难以满足目前的数据存储需求，亟需发展新一代高性能存储器。 | Today, with the rapid development of China＇s information industry, conventional memories cannot meet the current requirement of data storage.It is urgent to develop a new generation of highperformance memory. |
| 42911 | 阻变存储器 ( ＲＲAM) 因其具有结构简单、功耗低、集成密度高、读/写速度快等优势，被认为是最具发展潜力的新兴存储器之一。 | Ｒesistive random access memory (ＲＲAM) is considered as one of the most promising emerging memories due to its advantages of simple structure, low power consumption, high integration density, fast read and write speeds, and so on. |
| 42912 | 综述了三维 ＲＲAM 的发展现状，分析了现阶段三维 ＲＲAM 面临的漏电流、热串扰、均一性、可靠性等问题， | The development status of 3D-ＲＲAM is reviewed.The leakage current, thermal crosstalk, uniformity, reliability and other problems faced by 3D-ＲＲAM atpresent are analyzed. |
| 42913 | 重点探讨了针对以上问题的解决方案， | Solutions to these issues are emphatically discussed. |
| 42914 | 并对于 ＲＲAM 未来的应用前景进行了分析和预测， | The application prospect ofＲＲAM is analyzed and predicted. |
| 42915 | 认为其在替代传统存储器、神经网络计算、芯片加密防护等方面有重要的应用前景。 | It is believed that ＲＲAM has important application prospect in replacing conventional memories, improving neural network calculation, chip encryption protection, etc |