ID 原文 译文
42896 由化学机械抛光 ( CMP) 实验结果可知，随着抑制剂体积分数的不断提高，Cu 的去除速率和静态腐蚀速率均大幅减小，Co 的去除速率和静态腐蚀速率相对 Cu 的变化较小， The results of the chemical mechanical polishing (CMP) experiment show that with the increase of the volume fraction of the inhibitor, the removal rate and staticetching rate of copper are greatly reduced, variations of the removal rate and static corrosion rate of cobaltare relatively small than those of copper.
42897 较好地保证了 Cu /Co 之间的去除速率选择比。 A better removal rate selection ratio between copper and cobaltis guaranteed.
42898 动、静态Cu /Co 电化学实验结果对比表明:当 H2O2 体积分数为 0. 15%，甘氨酸质量分数为 1%时，在H2O2 与甘氨酸之间的协同作用下，Co 的标准电极电位低于 Cu 的，从而抑制了 Co 的腐蚀。 The result comparison of dynamic and static Cu /Co electrochemical experiments shows thatwhen the volume fraction of H2O2 is 0.15% and the mass fraction of glycine is 1%, the standard electrode potential of cobalt is lower than that of copper under the synergy between H2O2 and glycine, thusinhibiting the corrosion of cobalt.
42899 加入体积分数 0. 1%的 TT-LYK 后，抑制剂与 Cu 反应生成致密氧化膜，抑制了 Cu 的腐蚀，但其对 Co的影响较小， When TT-LYK with a volumn fraction of 0.1% is added, the inhibitorreacts with copper to form a dense oxidation film, which inhibits the corrosion of copper, but its effect oncobalt is relatively small.
42900 从而使 Cu /Co 电位差降低至 4 mV，较好地抑制了 Cu /Co 之间的电偶腐蚀。 Therefore the potential difference between copper and cobalt is reduced to 4 mVand the galvanic corrosion between Cu /Co is inhibited.
42901 随着半导体封装器件的不断发展，工作电流不断增加，对陶瓷封装的电性能提出了更高要求， With the continuous development of packaged semiconductor devices and the increase ofthe operating current, higher requirements for the electrical performance of the ceramic packaging are putforward.
42902 而导通电阻是衡量其电性能最重要的参数之一，会影响电路的稳定性和功耗波动。 On-resistance is one of the most important parameters for measuring the electrical performance ofdevices and affects the circuit stability and power dissipation fluctuation.
42903 提出了一种陶瓷封装中导通电阻仿真求解的新方法， A new method for on-resistancesimulation in ceramic packaging was proposed.
42904 利用 ANSYS 软件热阻仿真模型等效求解电阻的方式，实现导通电阻值的精确计算。 The thermal resistance simulation model of ANSYSsoftware was used to solve the resistance equivalently, and the accurate calculation of the on-resistancevalue was realized.
42905 阐述了热阻模型与电阻模型的等效机理，对比了传统估值法与仿真求解法的计算结果， The equivalent mechanisms of the thermal resistance model and the resistance modelwere presented, and the calculation results of the conventional estimation method and simulation methodwere compared.