ID 原文 译文
42876 最后对表面等离激元热载流子光电探测器的应用前景进行了展望。 Finally, the application prospects ofsurface plasmon hot-carrier photodetectors are prospected.
42877 制作 InGaP /GaAs 台面时，若使用湿法刻蚀需分多步进行，且易发生钻蚀问题，使得台面上的金属覆盖层易断裂。 When etching InGaP /GaAs mesa, wet etching needs to be carried out in multiple steps, and the problem of undercutting will occur, causing the metal cover layer on the mesa to be cracked.
42878 为改善 InGaP /GaAs 的台面形貌，以 N2 /Cl2 混合气体为刻蚀剂，采用电感耦合等离子体 ( ICP) 刻蚀，探讨了 Cl2 的体积分数、腔体压力、源功率和偏压功率等刻蚀条件对台面形貌的影响， Inorder to improve the morphology of InGaP /GaAs mesa, N2 /Cl2 were selected as the reaction gases, inductively coupled plasma (ICP) etching was used to investigate the effects of etching conditions such asCl2 volume fraction, chamber pressure, source power and bias power on the mesa morphology.
42879 并进一步研究刻蚀后台面形貌对金属台阶覆盖的影响。 The influence of the morphology of InGaP /GaAs mesa on the metal step coverage after etching was further investigated.
42880 实验结果表明，Cl2 的体积分数变化对刻蚀台面形貌影响最大，刻蚀后台面侧壁角的可控范围为 64. 1° ～92. 0°; The experimental results show that the volume fraction of Cl2 has the most significant influence onthe mesa morphology and the sidewall angle can be controlled from 64.1° to 92.0°, while the influencesof chamber pressure, source power and bias power are limited.
42881 而腔体压力、源功率和偏压功率对台面形貌的影响有限。当刻蚀台面侧壁角约为 65°时，金属台阶覆盖良好; Metal step coverage is better when themesa sidewall angle is about 65°,
42882 当刻蚀台面侧壁角约为 75°时，金属台阶覆盖会出现裂纹; while the metal crack exists as the angle is about 75°.
42883 当刻蚀台面侧壁角约为 90°时，金属台阶覆盖会断裂。 Furthermore, themetal disconnection is occurred when the sidewall angle is about 90°.
42884 随着集成电路芯片关键尺寸和金属连线线宽越来越小，传统的失效点定位方法，如微光显微镜或光束诱导电阻变化等，由于分辨率的限制不能精确地定位故障点。 With the decrease of critical dimensions and metal interconnection line widths of integrated circuit chips, conventional failure point localization methods such as emission microscope or opticalbeam induced resistance change cannot accurately locate failure points due to the limitation of the resolution.
42885 电压衬度分析方法虽然在一些开路、短路失效分析中能快速地定位失效点，但是其局限于芯片同层分析。 Although failure points can be quickly located by using voltage contrast analysis in some open-circuitand short-circuit failure analyses, it is still limited to the one layer analysis of the chip.