ID 原文 译文
42846 测试结果表明，采用背面 AlOx /SiNx 叠层钝化膜、SiNx 双层减反射膜、较大折射率梯度 SiNx 膜层、较薄 AlOx膜层及较薄 SiNx 膜层工艺，对提升双面 PEＲC 太阳电池背面效率及电池双面率效果显著， The test results show that the processes of backcoated AlOx /SiNx stack passivation film, the SiNx double-layer anti-reflection coatings, the SiNx film withhigher refractive index gradient, the thinner AlOx and SiNx films are effective for improving the rear sideefficiency and the bifaciality of the bifacial PEＲC solar cell.
42847 用最优设计方案制备的双面 PEＲC 太阳电池，其背面效率和双面率分别为 14. 96%和 68. 69%。 The rear side efficiency and the bifaciality ofthe bifacial PEＲC solar cell fabricated by using the optimal design scheme are 14.96% and 68.69%, respectively.
42848 针对电感耦合等离子体 ( ICP) 干法刻蚀后，AlGaN/GaN 台面区域存在隔离电流高的问题，研究了不同退火氛围、时间、温度对台面隔离电流的影响。 In order to solve the problem of high isolation current of the AlGaN/GaN mesa region after inductively coupled plasma (ICP) etching, the influences in different annealing atmospheres, time and temperatures on isolation current of the mesa region were studied.
42849 利用原子力显微镜 ( AFM)和 X 射线光电子能谱 ( XPS) 及电学测量仪器对样品进行表征和测试。 The samples were characterized andtested by atomic force microscope (AFM) , X-ray photoelectron spectroscopy (XPS) and electricalmeasurement setups.
42850 测试结果表明，在氧气和氮气氛围退火处理均能降低样品的隔离电流，且经退火处理后样品的隔离电流均处于 10－9 A/mm 数量级，但在氧气氛围中退火处理会使样品的欧姆接触电阻增大。 The test results indicate that annealing treatment in both of the oxygen and nitrogenatmospheres lead to the reduction of the isolation currents of the samples to the order of 10－9 A/mm.However, the ohmic contact resistance of the sample increases after the annealing treatment in oxygen atmosphere.
42851 在氮气氛围下的最佳退火处理条件为 400 ℃、120 s。 In the nitrogen atmosphere, the best annealing treatment conditions are 400 ℃ and 120 s.
42852 在该条件下样品经过退火处理后，在 200 V 直流偏压下测得样品的台面隔离电流仅为 4. 03×10－9 A/mm，与未经退火处理的样品相比降低了 4 个数量级， Afterannealing treatment under this condition, the isolation current in mesa region of the sample is only 4.03×10－9 A/mm at the DC bias voltage of 200 V, which is 4 orders of magnitude lower than that of the samplewithout annealing treatment.
42853 而且在高温测试中样品的隔离电流仍然能够保持较低的数值。 Meanwhile, the isolation current of the sample remains the lower value in thehigh temperatures test.
42854 集成电路特征尺寸的逐渐缩小带来了日益严峻的 Cu 互连线电迁移可靠性问题。 The gradual shortening of the integrated circuit feature size has brought increasingly serious problems with Cu interconnects electromigration reliability.
42855 为了改善 40 nm 和 55 nm 制程下 Cu 互连线的抗电迁移能力，基于加速寿命试验与失效分析的方法，研究了蓄水池结构对 Cu 互连线电迁移寿命的影响。 In order to improve the anti-electromigration ability of Cu interconnects under 40 nm and 55 nm processes, the effect of the reservoir structureon the electromigration lifetime of Cu interconnects was studied based on the accelerated lifetime test andfailure analysis methods.