ID |
原文 |
译文 |
42836 |
开关滤波器组芯片面积为 4 mm ×4 mm,高度约为 0. 4 mm。 |
The area of the switched filter bank chip is 4 mm×4 mm, the height is about 0.4 mm. |
42837 |
利用射频磁控溅射法结合退火工艺制备了多层结构的 MoS2 薄膜。 |
The MoS2 film with multilayer structure was prepared by RF magnetron sputtering methodand annealing process. |
42838 |
优化溅射功率和工作气压条件,在溅射功率为 30 W、工作气压为 1. 0 Pa 条件下制备了致密度良好的 MoS2 薄膜,X射线衍射测量结果表明这种原生的薄膜是非晶态的。 |
The sputtering power and working pressure conditions were optimized.MoS2 filmwith good compactness was prepared under the conditions of a sputtering power of 30 W and a workingpressure of 1.0 Pa.X-ray diffraction measurement results show that this as-grown film is amorphous. |
42839 |
对原生的 MoS2 薄膜在高纯氮气氛围下进行不同温度条件的退火, |
Theas-grown MoS2 film was annealed in a high-purity nitrogen atmosphere at different temperatures. |
42840 |
X 射线衍射和拉曼散射测量结果表明,退火温度达到 550 ℃ 时,MoS2 薄膜开始结晶化;温度为 650 ℃时,出现 MoS2 晶粒; |
X-raydiffraction and Raman scattering measurement results show that the MoS2 film begins to crystallize whenthe annealing temperature reaches 550 ℃, and MoS2 grains appear at 650 ℃ . |
42841 |
当退火温度达到 800~950 ℃时,薄膜转变成连续的多层 MoS2 薄膜,多层膜的 X 射线衍射峰半高宽为 0. 384°。 |
When the annealing temperature reaches 800-950 ℃, the film is transformed into a continuous multilayer MoS2 film, and the Xray diffraction peak full width at half maximum of the multilayer film is 0.384°. |
42842 |
这一结果表明,射频磁控溅射法结合热退火是一种制备多层 MoS2 薄膜的简单易行的方法。 |
This result indicates thatRF magnetron sputtering combined with thermal annealing is a simple and feasible method for preparingmultilayer MoS2 films. |
42843 |
基于钝化发射极和背面接触 ( PERC) 太阳电池工艺,对选择性发射极晶体硅双面PERC 太阳电池背面效率及双面率优化进行了研究。 |
Based on the passivated emitter and rear contact (PERC) solar cell process, the rearside efficiency and bifaciality optimization of selective emitter crystalline silicon bifacial PERC solar cellswere studied. |
42844 |
采用等离子体增强化学气相沉积 ( PECVD)设备,制备了背面为 AlOx /SiNx 钝化膜层的双面 PERC 太阳电池。 |
Plasma enhanced chemical vapor deposition (PECVD) equipment was used to produce bifacial PERC solar cells with back-coated AlOx /SiNx passivation. |
42845 |
提出了几种不同背面钝化膜层的设计方案,分析了不同设计方案对双面 PERC 太阳电池背面效率及双面率的影响。 |
Several designs of passivation film on therear side were proposed, and the influences of different design schemes on the rear side efficiency and thebifaciality of the bifacial PERC solar cell were analyzed. |