ID 原文 译文
42826 通过降低可编程分频器的相位噪声和提高鉴相器工作频率的方法，降低 PLL 频率源环路内的相位噪声。 The phase noise in the PLL frequency source loop was reduced by reducing the phase noise of theprogrammable frequency divider and increasing the operating frequency of the phase detector.
42827 采用 GaAs 异质结双极晶体管 ( HBT)工艺对 PLL 进行了设计、仿真和流片，PLL 芯片面积为 1. 95 mm×1. 95 mm。 The PLLchip with an area of 1.95 mm × 1.95 mm was designed, simulated and fabricated with GaAsheterojunction bipolar transistor (HBT) technology.
42828 测试结果表明，在电源电压 5 V 条件下，该 PLL 电流为 250 mA，射频输入频率为 0. 01 ～ 2. 2 GHz，鉴相器工作频率为0.01～1 GHz，分频比为 2～32，典型归一化本底噪声为－232 dBc /Hz; The test results show that under the supply voltageof 5 V, the PLL current is 250 mA, the ＲF input frequency is 0.01－2.2 GHz, the operating frequencyof the phase detector is 0.01－1 GHz, the frequency division ratio is 2－32, and the typical normalizedphase noise floor is －232 dBc /Hz.
42829 当 VCO 输出频率为6 GHz，鉴相频率为 500 MHz 时，PLL 频率源的相位噪声为－121 dBc /Hz@ 10 kHz。 When the output frequency of VCO is 6 GHz and the phase detectionfrequency is 500 MHz, the phase noise of PLL frequency source is －121 dBc /Hz@ 10 kHz.
42830 基于异构集成技术，研制了一款各通道中心频率分别为 1. 5，1. 8，1. 9 和 2. 0 GHz 的四通道高性能开关滤波器组芯片。 Based on the heterogeneous integration technology, a four-channel high-performanceswitched filter bank chip with the center frequency of 1.5, 1.8, 1.9 and 2.0 GHz respectively was developed.
42831 使用了金锡凸点焊接的组装工艺，与键合线工艺相比，其互连强度更高，寄 生 参 数 更 小。 Compared with the bonding process, Au-Sn bump welding technology was used, its intensity ofthe interconnection was higher and the parasitic parameters were smaller.
42832 薄 膜 体 声 波 谐 振 器 ( FBAＲ) 滤波器芯片与微波单片集成电路( MMIC) 开关电路芯片采用自主可控的 FBAＲ 工艺、0. 35 μm GaAs 工艺研制。 The film bulk acoustic resonator(FBAＲ) filter chip and the monolithic microwave integrated circuit (MMIC) switched circuit chip weredeveloped using the self-controllable FBAＲ process and 0.35 μm GaAs process.
42833 为满足窄带、高矩形度、低插入损耗开关滤波器组的需求，FBAＲ 滤波器电路采用阶梯型拓扑结构。 In order to meet the requirements such as narrow bandwidth, high rectangle scoefficient and low insertion loss simultaneously, aladder-type topology structure were used by the FBAＲ filter circuit.
42834 开关电路使用串－并联混合结构，兼顾低插入损耗和高隔离度。 The switch circuit used the seriesshunt compound structure, taking into account both low insertion and high isolation.
42835 经探针台测试结果显示，各通道中心插入损耗小于 3 dB，矩形系数比约为 2. 0，带外抑制大于45 dBc。 The results of microwave probe measurements show that the insertion loss at centre frequency of each channel in switched filter band is lower than 3 dB, rectangle coefficient is about 2.0, the rejection in stop-band is more than45 dBc.