ID 原文 译文
42816 Al2O3 薄膜的表面均匀、连续，生长 2 h 后膜厚度约为 20 ～ 30 nm。 The surface of the Al2O3 thin film is uniform and continuous, and the thin film thickness is 20～30 nm after growing for 2h.
42817 薄膜的电绝缘性能良好，平均击穿场强达到 1. 74 MV/cm，可以用作半导体器件的绝缘层。 The electrical insulation properties of the thinfilm are good, and the average breakdown field strength reached is about 1.74 MV/cm, which be used asan insulation layer in semiconductor devices.
42818 进一步将 CLD 法制备的 Al2O3薄膜用作摩擦电纳米发电机 ( TENG) 中的电子阻挡层， It was further proposed to use the Al2O3 thin film preparedwith the CLD method as an electron blocking layer in a triboelectric nanogenerator (TENG) .
42819 其开路电压和短路电流约为 120 V 和5 μA，分别是不含 Al2O3 TENG 的 1. 6 倍和 2 倍。 Its open circuit voltage and short circuit current are about 120 V and 5 μA, respectively, which are 1.6 times and 2 times higher than those of the TENG without an Al2O3 layer.
42820 该薄膜不受摩擦层磨损的影响，可以有效地改善 TENG 性能。 This Al2O3 thin film was not affected bythe wear of the friction layer and effectively improve the performance of the TENG.
42821 结果表明，CLD 法可作为一种在室温下、低成本、无毒且简便的新方法，用于半导体器件中绝缘或钝化薄膜的制备。 The results indicate that the CLD method can serve as a low cost, nontoxic and facile new technique at room temperature forthe preparation of insulation or passivation thin films in semiconductor devices.
42822 设计了一款低相位噪声的锁相环 ( PLL) ， A phase-locked loop (PLL) with low phase noise was designed.
42823 该 PLL 主要由可编程分频器、鉴相器和锁定指示电路等组成， The PLL was mainly composed of the programmable frequency divider, phase detector and lock detect circuits.
42824 通过外接参考时钟、有源环路滤波器和压控振荡器 ( VCO) 构成完整的 PLL 频率源。 A complete PLL frequency source was composed of the external reference clock, active loop filter and voltage-controlled oscillator (VCO) .
42825 研究了 PLL 频率源中各个噪声源及其传递函数， The noise sources and their transfer function in the PLL frequency source were studied.