ID 原文 译文
42806 4 英寸 ( 1 英寸= 2. 54 cm) 半绝缘 GaAs 单晶材料是目前制备微波毫米波单片集成电路等的主流材料， The 4-inch (1 inch = 2.54 cm) SI-GaAs single crystal material is the main material ofproducing microwave millimeter wave monolithic integrated circuits.
42807 随着 5G 技术应用的普及，该材料的应用前景将更加广阔。 With the popularization of 5G technology, the application prospect test of SI-GaAs will be more broad.
42808 但是由于采用常规垂直梯度凝固 ( VGF) 法晶体生长工艺所得的单晶尾部径向电阻率均匀性较差，严重影响了相关器件性能的一致性。 However, with the situation of poorradial resistivity uniformity of crystal tail grown by the routine vertical gradient freeze (VGF) method, the performance consistency of related devices was deeply affected.
42809 对采用 VGF 和 ( VGF+垂直布里奇曼 ( VB) ) 两种晶体生长工艺所得的半绝缘 GaAs 单晶头尾径向电阻率不均匀性测试进行分析， The radial resistivity uniformities testof SI-GaAs single crystal at the tail and head grown by VGF and (VGF +vertical Bridgman (VB))methods were analyzed.
42810 优化了 ( VGF+VB) 晶体生长相关工艺条件， The process conditions of (VGF+VB) crystal growth were optimized.
42811 并确定了 VB 晶体生长部分比较合理的起始位置及生长速度。 The reasonable starting position and the growth speed of VB crystal were determined.
42812 在保证晶锭头尾电阻率均达到108 Ω·cm以上的情况下，有效地降低了晶体尾部径向电阻率不均匀性，使其由原来的大于20%降低到小于 10%，提高了晶体质量。 The radial resistivity inhomogeneity of crystal tail was effectively reduced from more than 20% to less than 10%, under the condition that the resistivity of ingot head and tail reached more than 108 Ω·cm, and the crystal quality was greatly improved.
42813 通过该工艺还可有效排杂到晶体尾部，增加高电阻率单晶有效长度。 Through this process, the impurity can be effectively discharged to the crystal tail and effective length of high resistivity single crystal can be increased.
42814 采用化学液相沉积 ( CLD) 法在氧化铟锡 ( ITO) 导电玻璃和硅基板表面制备了大面积的氧化铝 ( Al2O3 ) 薄膜， Large area aluminum oxide (Al2O3) thin films were prepared on the surface of indiumtin oxide (ITO) coated conductive glass substrates and Si substrates by the chemical liquid deposition(CLD) method.
42815 并以非腐蚀的方式在硅片表面使用 CLD 法直接生长图案化 Al2O3 薄膜。 A patterned Al2O3 thin film was directly prepared on the surface of silicon wafer in anon-etching way with the CLD method.