| ID | 原文 | 译文 |
| 42796 | 结果表明，应变对 UTBB NMOSFET 电子能谷占有率影响较大; | The results show that the strain has a great influence on the electron valley occupancy of UTBB NMOSFET. |
| 42797 | UTBB NMOSFET 电子能谷占有率随沟道载流子浓度的变化趋势与常规 NMOSFET 器件不同; | The change trend of electron valley occupancy of UTBB NMOSFET with carrier concentration in the channel is different from that of traditional MOSFET devices. |
| 42798 | 随着器件沟道硅膜厚度的增加，无限高度的矩形势阱近似计算误差较大。 | With the increase of the thickness of siliconfilm in device channel, the calculation error of infinite height rectangular potential well approximation islarger. |
| 42799 | 所建解析模型能直接用于硅基应变 UTBB MOSFET 迁移率、电流等参数计算，为器件及电路设计人员提供理论依据。 | The proposed model can be used to calculate the mobility and current for UTBB MOSFET, whichprovides theoretical basis for device and circuit designers. |
| 42800 | 高 k 介质金属栅工艺器件的热载流子注入 ( HCI) 效应已经表现出与成熟工艺不同的退化现象和失效机理。 | The hot carrier injection (HCI) effect of high-k dielectric metal gate process devices hasshown different degradation phenomena and failure mechanisms from that of the mature process. |
| 42801 | 对不同栅电压下 n 型和 p 型金属氧化物场效应晶体管 ( MOSFET) 的饱和漏电流退化情况，以及器件的退化效应进行测试和分析。 | The degradation of the saturation leakage current of n-type and p-type MOSFETs at different gate voltages and thedegradation effects of the device were tested and analyzed. |
| 42802 | 通过分析衬底电流和栅电流在不同栅电压下的变化趋势对失效机理进行探讨，分析其对饱和漏电流退化的影响。 | By analyzing the change tendencies of the substrate current and the gate current under different gate voltages, the failure mechanism was discussed, and the effect on the degradation of the saturation leakage current was analyzed. |
| 42803 | 研究结果表明，在高 k介质金属栅工艺器件的 HCI 测试中，器件退化不再是受单一的老化机理影响，而是 HCI 效应、偏置温度不稳定 ( BTI) 效应综合作用的结果。 | The research results showthat in the HCI test of high-k dielectric metal gate process devices, the device degradation is no longer affected by a single aging mechanism, and it is affected by the combination of HCI effects and bias temperature instability (BTI) effects. |
| 42804 | HCI 测试中，在不同测试条件下失效机理也不再唯一。 | In the HCI test, the failure mechanism is no longer unique underdifferent test conditions. |
| 42805 | 研究结果可为高 k 介质金属栅工艺下器件可靠性测试中测试条件的选择以及准确的寿命评估提供参考。 | The research results provide reference for the selection of test conditions and accurate lifetime evaluation in device reliability testing under high-k dielectric metal gate process |