ID 原文 译文
42746 为了验证该加工流程对晶片参数的影响，研究了 InP 晶锭表面起伏对晶片厚度一致性、翘曲度、弯曲度等几何参数的影响。 In order to verify the influences of the new processing flow on wafer parameters, the influencesof InP ingot surface fluctuation on the thickness uniformity, warp, bow and other geometric parameters ofwafers were studied.
42747 实验结果表明，在切割参数相同的情况下，采用本加工技术获得的晶片厚度一致性较差，造成参数恶化的原因是晶锭表面起伏使钢线在接触晶锭表面时可能出现位移。 The experimental results show that the thickness uniformity of wafers obtained by thisprocessing technology is poor under the same cutting parameters, and the reason for the deterioration ofparameters is that the fluctuation of ingot surface may cause the displacement of the steel wire when contacting the ingot surface.
42748 通过在晶锭表面粘接特殊的板补偿晶体表面起伏，改善了晶片厚度一致性。 The thickness uniformity of the wafer was improved by bonding special plates onthe ingot surface to compensate the fluctuation of crystal surface.
42749 本方法可以在保证生产质量合格的成品晶片的同时，大幅度提高晶锭最终出片面积。 The method can ensure the production ofqualified finished wafers and greatly improve the final wafer area of ingots
42750 极大规模集成电路 ( GLSI) 制造中化学机械抛光 ( CMP) 过程中会产生很多缺陷，其会对产量和可靠性产生不利影响。 Many defects occur during the chemical mechanical polishing (CMP) process in thegiant large scale integrated circuit (GLSI) manufacturing, which can adversely affect yield andreliability.
42751 研究了复合表面活性剂对划伤缺陷数量减少的作用。 The effects of compound surfactants on reducing the number of scratch defects were investigated.
42752 使用大颗粒测试仪表征抛光液中颗粒尺寸的变化， The change of particles size in the slurry was characterized by the large particle tester.
42753 使用接触角测试仪表征抛光液的变化， The change ofslurry was characterized by the contact angle tester.
42754 通过原子力显微镜 ( AFM) 和光学显微镜表征抛光后的铜片表面的划伤缺陷。 The scratch defect after polishing was characterized by the atomic force microscope (AFM) and optical microscope.
42755 实验结果表明，通过复配两种不同的表面活性剂，可以降低磨料大颗粒数量从 25 万级到 15 万级，实现划伤缺陷数量从 4 084降低至 51，表面粗糙度从 4. 66 nm 降至 0. 447 nm。 The experimental results show that bycombining two different surfactants, the large particle count of the abrasive can be reduced from 250 000to 150 000, the number of scratch defects can be reduced from 4 084 to 51, and the surface roughnesscan be reduced from 4.66 nm to 0.447 nm.