ID 原文 译文
42736 最后验证了所设计的驱动电路能保证驱动速度和栅极电压需求，并通过栅极电阻改变开关特性。 Finally, it is verified that the driving circuit can guarantee the driving speedand gate voltage demand, and change the switching characteristics through gate resistance.
42737 为了更好地表征 Si 基超薄 InAlN /GaN HEMT 开关器件的特性和开发更精确的开关电路模型，基于 0. 25 μm HEMT 工艺制备了不同栅极电阻的开关器件，提出了附加 10 kΩ 栅极电阻的器件结构，并对开关器件进行了小信号模型分析。 In order to better characterize the characteristics of Si-based ultra-thin InAlN /GaNHEMT switching devices and develop more accurate switching circuit models, switching devices with different gate resistances were prepared based on the 0.25 μm HEMT process, and a device structure withan additional 10 kΩ gate resistance was proposed.Moreover, a small signal model analysis of theswitching device was performed.
42738 采用传统的去嵌结构提取了开关器件的寄生电容、电感和电阻参数来得到相应的本征参数。 The parasitic capacitance, inductance and resistance parameters of theswitching device extracted with the traditional de-embedding structure were used to obtain the corresponding intrinsic parameters.
42739 采用误差因子评估模型的准确度，结果表明模型拟合和实测的 S 参数基本吻合。 The error factor was used to evaluate the accuracy of the model.The resultsshow that the fitting and measured S parameters of the model are basically consistent.
42740 最后将模型应用在 Ku 波段单刀双掷 ( SPDT) 开关电路的设计中， Finally, the modelwas applied to the design of the Ku-band single-pole double-throw (SPDT) switching circuit.
42741 实测的开启状态下该电路的插入损耗小于 2. 28 dB，输入回波损耗大于 10 dB，输出回波损耗大于 12 dB; The measured on-state insertion loss is less than 2.28 dB, the input return loss is greater than 10 dB, and theoutput return loss is greater than 12 dB.
42742 关断状态下其隔离度大于 36. 54 dB。 The off-state isolation is greater than 36.54 dB.
42743 所提出的 Si 基 InAlN /GaN HEMT 模型可以为Si 基 HEMT 的电路设计和集成提供一定的理论指导。 The proposed Si-based InAlN /GaN HEMT model can provide theoretical guidance for the design and integration ofSi-based HEMT circuits.
42744 通过改进 InP 晶锭加工流程的设计，明显提高了直径不均匀或者含有多晶或孪晶晶锭的出片量。 By improving the design of InP single crystal ingot processing flow, the output amount ofwafers for crystals with uneven diameter or including poly or twin ingots was significantly increased.
42745 与传统半导体材料晶锭加工流程相比，采用本加工技术加工晶锭的最终出片面积至少能够提高 20%，在某些情况下能达到 50%以上。 Compared with the traditional semiconductor ingot processing flow, the final wafer area of the ingot processedby this processing technology could be increased by at least 20%, and in some cases, it could reach morethan 50%.