ID 原文 译文
42726 通过 X 射线衍射 ( XＲD) 、扫描电子显微镜 ( SEM) 与高分辨率透射电子显微镜( HＲ-TEM) 对 GaN 外延层进行表征分析。 The GaN epitaxial layers were characterized and analyzed by X-ray diffraction (XＲD) , scanning electron microscope (SEM) and high resolution transmission electron microscope (HＲ-TEM) .
42727 实验结果表明:在 PSS 上溅镀 AlN 缓冲层时，AlN /蓝宝石界面处的氧浓度决定 GaN 样品的生长模式。 The experimental results show that the oxygen concentration at the AlN / sapphire interface determines thegrowth mode of GaN samples when sputtering the AlN buffer layer on the PSS.
42728 通入氧形成的 AlON 能够减少 GaN 晶体在 PSS侧壁生长，提高 GaN 晶体质量。 The AlON formed by inletting oxygen can suppress the growth of GaN on the side wall of PSS and improve the crystal quality ofGaN.
42729 GaN /AlON 或( AlN /AlON) /PSS 结构的 GaN 的螺位错密度为4.40×107 ～ 5. 03 × 107 cm－2，刃位错密度为 1. 70 × 108 ～ 1. 71 × 108 cm－2; For the GaN /AlON or (AlN /AlON) /PSS structure, the screw and edge dislocations densities ofGaN were 4.40×107－5.03×107 cm－2 and 1.70×108－1.71×108 cm－2, respectively;
42730 而 GaN /AlN 或( AlON /AlN) /PSS 结构的 GaN 的螺位错密度为 2. 55×108 ～ 7. 65×108 cm－2，刃位错密度为 1. 38 × 1010 ～2. 89×1010 cm－2; while for the GaN /AlN or (AlON /AlN) /PSS structure, the screw and edge dislocations densities of GaN were 2.55×108 －7.65×108 cm－2 and 1.38×1010－2.89×1010 cm－2, respectively.
42731 GaN /AlN /PSS 结构相比 GaN /AlON /PSS 结构的 GaN 位错密度高 1 ～ 2 个数量级。 The GaN dislocation density of the GaN /AlN /PSS structure is 1－2 orders higher than that of the GaN /AlON /PSS structure.
42732 近年来基于 SiC 和 GaN 的宽禁带半导体器件开始逐渐替代传统的 Si IGBT 器件， In recent years, wide bandgap semiconductor devices based on SiC and GaN has substituted the Si IGBT devices gradually.
42733 而面对高的开关速度所带来的问题，宽禁带半导体器件的开关特性分析以及驱动电路的设计在系统可靠运行方面显得尤为重要。 However, facing the problems caused by high-frequency switching speed, the analysis of the switching characteristics of wide bandgap semiconductor devices and the designof the driving circuit are especially important in the reliable operation of the system.
42734 以 SiC MOSFET 模块 C2M0280120D 为例设计了一款驱动电路，并在双脉冲测试平台对驱动电路进行了验证，同时分析了不同栅极驱动电阻对 SiC MOSFET 开关特性的影响。 Taking the SiC MOSFET module C2M0280120D as an example, a driving circuit was designed, and the driving circuit wasverified on the double pulse test platform.Meanwhile, the influence of different gate driving resistances onthe switching characteristics of the SiC MOSFET was analyzed.
42735 比较了传统 Si 器件和 SiC 宽禁带半导体器件在静态特性和开关特性上的差异，以分析SiC MOSFET 驱动与传统 Si IGBT 驱动的区别。 The differences in the static characteristicsand the switching characteristics between the conventional Si devices and SiC wide bandgapsemiconductor devices were compared to analyze the differences between the new SiC MOSFET driver andtraditional Si IGBT driver.