ID 原文 译文
42716 然后将石英管装入单晶炉内，升温熔化多晶并熔接籽晶后，采用垂直梯度凝固 ( VGF) 法生长晶体肩部，采用垂直布里奇曼 ( VB) 法生长晶体等径部分。 Then the quartz tube was put into thesingle crystal furnace.After heating and melting polycrystal and welding the seed crystal, the shoulderpart of crystal was grown by the vertical gradient freeze (VGF) method, and the equal diameter part ofcrystal was grown by the vertical Bridgeman (VB) method.
42717 在对 VGF 和VB 晶体生长法进行理论分析的基础上，采取优化支撑结构、增加 VGF 晶体生长降温速率、优化VB 晶体生长速度等措施提高 6 英寸 GaAs 晶体生长的成晶率至 48%以上。 Based on the theoretical analysis of VGF andVB crystal growth method, the crystallization rate of the 6-inch GaAs crystal was increased to more than48% by optimizing the support structure, increasing the cooling rate of VGF crystal growth and optimizingthe growth rate of VB crystal.
42718 基于半绝缘 GaAs 补偿理论，采取过量碳粉掺杂和 El2 的控制等措施，提高晶体电阻率至大于 4×107 Ω·cm，降低电阻率不均匀性至小于 25%。 Based on the compensation theory of semi-insulating GaAs, the resistivity ofthe crystal was increased to more than 4×107 Ω·cm and the heterogeneity of resistivity was reduced toless than 25% by doping excessive carbon powders and El2 controlling.
42719 通过优化生长界面，使 GaAs 单晶的位错密度降低至小于 104 cm－2。 The dislocation density of theGaAs single crystal was reduced to less than 104 cm－2 by optimizing the growth interface.
42720 提出了一种新型 GeSn /Ge 异质无结型隧穿场效应晶体管 ( GeSn /Ge-hetero JLTFET) 。 A novel GeSn /Ge hetero junctionless tunnel field effect transistor (GeSn /Ge-hetero JLTFET) was proposed.
42721 该器件结合了直接窄带隙材料 GeSn 与传统 JLTFET 的优点，利用功函数工程诱导器件本征层感应出空穴 ( p 型) 或电子 ( n 型) ，在无需掺杂的前提下，形成器件的源区、沟道区和漏区，从而避免了使用复杂的离子注入工艺和引入随机掺杂波动。 The GeSn /Ge-hetero JLTFET combined the advantages of the small and directbandgap material GeSn with the traditional JLTFET by using workfunction engineering to induce hole (ptype) or electron (n type) at the intrinsic layer of the device to form the source region, channel regionand drain region without any complex ion-implantation process and random dopant fluctuations.
42722 该器件减小了隧穿路径宽度，提高了开态电流，获得了更陡峭的亚阈值摆幅。 The proposed device decreases the tunneling path width, improves the on-state current, and obtains steeper subthreshold swing.
42723 仿真结果表明 GeSn /Ge-hetero JLTFET 的开态电流为7.08×10－6 A /μm，关态电流为 3. 62×10－14 A/μm，亚阈值摆幅为 37. 77 mV/ dec。 The simulation results show that the on-state current of the GeSn /Ge-hetero JLTFET is7.08×10－6 A/μm, the off-state current is 3.62×10－14 A/μm, and the subthreshold swing is 37.77 mV/ dec.
42724 同时，GeSn/Ge?hetero JLTFET 的相关参数 ( 跨导、跨导生成因子、截止频率和增益带宽积) 的性能也优于传统器件 Meanwhile, the relative parameters of the GeSn /Ge-hetero JLTFET (transconductance, transconductancegeneration factor, cut-off frequency and gain bandwidth product) also outperform those of the transitionalJLTFET.
42725 采用物理气相沉积 ( PVD) 技术在 4 英寸 ( 1 英寸 = 2. 54 cm) 图形化蓝宝石衬底( PSS) 上沉积 4 种 AlN 或 AlON 薄膜样品，使用金属有机化学气相沉积 ( MOCVD) 在样品上外延生长 GaN。 Four kinds of AlN or AlON thin film samples were grown on the 4 inch (1 inch =2.54 cm) patterned sapphire substrate (PSS) by physical vapor deposition (PVD) technique, and theGaN layers were epitaxially grown on these samples by metal organic chemical vapor deposition(MOCVD) .