ID 原文 译文
42706 研制了一种基于 6 英寸 ( 1 英寸= 2. 54 cm) GaAs 外延片的具有高隔离度、低插入损耗的 pin 开关二极管。 A 6-inch (1 inch = 2.54 cm) GaAs epitaxial wafer based pin switching diode with highisolation and low insertion loss was developed.
42707 采用台面垂直结构以提高器件的工作频率、改善表面击穿电压。 A mesa vertical structure was adopted to increase theoperating frequency and improve the surface breakdown voltage of the device.
42708 提出了采用分步腐蚀法对高台面腐蚀的深度和均匀性进行精准控制。 A step-by-step etchingmethod was proposed to precisely control the etching depth and uniformity of the high mesa.
42709 金属互连线使用空气桥互连技术，解决高台面连线困难的问题。 The airbridge interconnect technology was used in metal interconnect to solve the difficulty of high mesa connection.
42710 p 型欧姆接触金属采用 Ti /Pt /Au，比接触电阻约为 5×10－6 Ω·cm2。 Ti /Pt /Au was used for the p-type ohmic contact metal to achieve a specific contact resistance ofabout 5×10－6 Ω·cm2.
42711 在无源器件部分制备了电容密度约为 597. 5 pF /mm2 的金属－绝缘体－金属 ( MIM) 电容和方块电阻约为 48. 5 Ω/□的 TaN 电阻并进行了钝化。 In passive component part, a metal-insulator-metal (MIM) capacitor with a capacitance density of 597.5 pF /mm2 and a TaN resistor with a square resistance of 48.5 Ω/□ were fabricated and passivated.
42712 该 pin 开关二极管的开启电压约为 1. 1 V，反向击穿电压约为 25 V。 The pin switching diode has a turn-on voltage of about 1.1 V and a reverse breakdown voltage of about 25 V. A single-pole double-throw (SPDT) switch was designed and fabricatedusing the pin diodes.
42713 使用该 pin 二极管设计制备了一款单刀双掷 ( SPDT) 开关，在 35 GHz 频率下，测得该 SPDT 开关的隔离度约为 28 dB，插入损耗约为 1. 2 dB，适用于 5G 微波通信的开关设计制造。 At the frequency of 35 GHz, the SPDT switch exhibits an isolation of about 28 dBand an insertion loss of about 1.2 dB, which is suitable for the design and manufacture of 5G microwavecommunication switch.
42714 为了生长 6 英寸 ( 1 英寸= 2. 54 cm) 半绝缘 GaAs 单晶，采用水平梯度凝固 ( HGF)法合成 GaAs 多晶。 In order to grow the 6-inch (1 inch = 2.54 cm) semi-insulating GaAs single crystal, theGaAs polycrystal was synthesized by the horizontal gradient freeze (HGF) method.
42715 将装有籽晶、GaAs 多晶、氧化硼和碳粉的热解氮化硼 ( PBN) 坩埚装入石英管内并抽真空后密封。 The pyrolytic boronnitride (PBN) crucible containing the seed crystal, GaAs polycrystal, boron oxide and carbon powderwas put into the quartz tube which would be vacuumed and sealed.