ID 原文 译文
42676 结果表明，GO 的加入使 PPy /GO 薄膜相比 PPy 薄膜展现出更为优异的电容性能。 The results show that the film doped with GO exhibits better capacitanceproperties than PPy film.
42677 在不同电流密度下进行恒流充放电测试，发现 PPy /GO 薄膜具有更好的倍率特性; The galvanostatic charge-discharge tests were carried out at different currentdensities, and the tests show that the PPy /GO film has better rate characteristics.
42678 当前驱体混合溶液中 Py 与 GO 摩尔比为 10 ∶ 4 时制备的薄膜具有更好的电容性能，在 1 A/g 电流密度下测试其比电容达 394. 88 F /g，充放电循环1 000次后比电容保持率为 90. 25%。 The film prepared inthe precursor mixture with a Py to GO molar ratio of 10 ∶ 4 has better capacitance properties.Its specificcapacitance reaches up to 394.88 F /g at a current density of 1 A/g, and it displays 90.25% retention ofits initial specific capacitance after 1 000 cycles.
42679 建立了绝缘体上鳍 ( FOI) 鳍式场效应晶体管 ( FinFET) 的电流模型，通过推导出背栅对前栅的耦合系数，使电流模型可以预测背栅电压对沟道电流的影响。 A current model of fin-on-insulator (FOI) fin field effect transistors (FinFETs) wasestablished, which could predict the channel current under different back-gate biases by theoretical deriving the coupling coefficient between back- and front-gates.
42680 该模型可以较为精准地预测实验数据和 TCAD 仿真结果，并且对于 FOI FinFET 的鳍宽和侧壁倾斜角等几何参数有较宽的适用范围。 The proposed model can accurately predictboth the experimental and TCAD simulation results, which has a wide application range for various geometry parameters, such as the fin width and sidewall inclination angle of FOI FinFETs, etc.
42681 通过提取耦合系数，证明了背栅对前栅的耦合效应将随着鳍宽和侧壁倾角的增大而增强，而鳍底部的夹角对沟道的影响可以忽略。 By extracting the coupling coefficient, it is proved that the coupling effect between back- and front-gates is enhancedwith the increase of the fin width and sidewall inclination angle, and the influence of fin bottom angle can be ignored.
42682 所提出的模型可以用于建立 BSIM 模型，指导设计者优化器件性能，以及进行背栅偏置的低功耗集成电路设计。 The proposed model can be used to build BSIM models, guide designers to optimize deviceperformances, and employ the back-gate bias in low-power integrated circuits design.
42683 前驱体材料广泛应用于集成电路的关键工艺中，如外延、光刻、化学气相沉积以及原子层沉积。 Precursor materials are widely used in the key processes of the integrated circuit (IC) , such as epitaxy, photolithography, chemical vapor deposition and atomic layer deposition.
42684 其中硅基前驱体是重要且用量较大的一个分支，近年来一直是先进集成电路材料领域研究的热点之一。 Silicon-based precursor is an important branch with large amount of demand and has become one of the researchhotspots in the field of advanced IC materials in recent years.
42685 以集成电路制造工艺和器件结构的技术发展为基础，综述了业界几种较为流行的硅基前驱体材料的结构与性能，其中包括二氯硅烷 ( DCS) 、乙硅烷 ( DS) 、八甲基环四硅氧烷 ( OMCTS) 、四甲基硅烷 ( 4MS) 、六氯乙硅烷 ( HCDS) 、双 ( 叔丁氨基) 硅烷 ( BTBAS) 、双 ( 二乙氨基) 硅烷 ( BDEAS) 、三 ( 二甲胺基) 硅烷 ( 3DMAS) 和三甲硅烷基胺 ( TSA) 。系统介绍了硅基前驱体的应用现状和研究进展，并对其合成和提纯工艺进行了探讨。 Based on the technology development of ICmanufacturing processes and device structures, the structures and properties of several mainstreamsilicon-based precursor materials including dichlorosilane (DCS) , disilane (DS) , octamethylcyclotetrasiloxane (OMCTS) , tetramethylsilane (4MS) , hexachlorodisilane (HCDS) , bis (tert-butylamino)silane (BTBAS) , bis (diethylamino) silane (BDEAS) , tris (dimethylamino) silane (3DMAS) andtrisilylamine (TSA) are summarized, application status and research progresses of the silicon-based precursors are systematically introduced, and the corresponding synthesis and purification processes ofsilicon-based precursors are also analyzed and discussed.