ID 原文 译文
42656 迁移率为 837 cm2·V－1·s－1，比化学配比 InP 晶片低50.3%。 the mobility is 837 cm2·V－1·s－1, which is 50.3% lower than that of the stoichiometric InP ratio wafer;
42657 磷气孔破坏了晶体的化学配比和晶格完整性，晶格排列较差，气孔附近位置结晶质量差。 the phosphorus pores destroy the stoichiometric ratio and lattice integrity of the crystal, the lattice arrangement is poor, the crystal quality near thepores is poor.
42658 磷气孔对周围位置产生一定应力，导致周围位错堆积，气孔使晶片的迁移率下降。 A certain stress is generated around the phosphorus pores, which leads to the accumulation ofdislocations and the decrease of the mobility of the wafer due to the pores.
42659 基于 n 型 β-Ga2O3 制备了具有 T 型栅结构的高性能 Ga2O3 金属氧化物半导体场效应晶体管 ( MOSFET) 。 High performance gallium oxide (Ga2O3) metal-oxide-semiconductor filed-effect transistors (MOSFETs) with T-shaped gate structure were fabricated based on n-type β-Ga2O3 .
42660 采用金属有机化学气相沉积 ( MOCVD) 法在 Fe 掺杂的半绝缘 β-Ga2O3 衬底上同质外延生长 200 nm 厚的 Si 掺杂 n 型 β-Ga2O3 沟道层，掺杂浓度为 5×1017 cm－3。 A 200 nm Sidoped n-type β-Ga2O3 channel layer with a doping concentration of 5×1017 cm－3 was homoepitaxial grownon a Fe-doped semi-insulating β-Ga2O3 substrate by metal organic chemical vapor deposition (MOCVD)method.
42661 器件采用栅长为 1 μm 的 T 型栅结构，栅源间距为 2 μm，栅漏间距为 18 μm; T-shaped gate structure with the gate length of 1 μm was adopted.The gate-to-source and gateto-drain distances are 2 and 18 μm, respectively.
42662 采用原子层沉积 ( ALD) 法生长的高介电常数氧化铪 ( HfO2 ) 作为栅介质。 Moreover, hafnium oxide (HfO2) with a high dielectricconstant grown by atomic layer deposition (ALD) method was used as gate dielectric.
42663 研制的器件漏源饱和电流密度达到 115. 8 mA/mm，比导通电阻为 52. 82 mΩ·cm2。 The fabricated device has a high saturation drain current density of 115.8 mA/mm, a low specific on-resistance of 52.82 mΩ·cm2.
42664 T 型栅结构有效抑制了 Ga2O3 沟道中的峰值电场强度，提升了器件的耐压特性; The T-shaped gate structure suppresses the peak electric filed intensity in the Ga2O3 channel effectively, and the breakdown characteristics of the device are improved.
42665 而高介电常数的 HfO2 介质有效降低了器件的漏电流， Besides, the HfO2 dielectric with a high dielectric constant reduces the leakage current of the device effectively.