ID 原文 译文
42646 在采用物理气相传输 ( PVT) 法生长碳化硅 ( SiC) 单晶的过程中，放射状裂纹是常见的缺陷。 The radial crack is a common defect observed in SiC single crystals grown by the physicalvapor transport (PVT) method.
42647 使用微分干涉显微镜对 SiC 单晶体和晶体抛光片表面形貌进行观测，结合晶体突变光滑面生长模型，对 PVT 法生长的 SiC 单晶放射状裂纹缺陷的形成机理进行了研究，并提出了消除或抑制放射状裂纹缺陷产生的方法。 The surface morphologies of the SiC single crystal and polished waferswere observed by the differential interference contrast microscope.Combined with the step-flow andcrystal plastic deformation model, a formation mechanism of radial crack defects in the SiC single crystalgrown by the PVT method was studied, and a method for eliminating or suppressing the generation of radial cracks was proposed.
42648 研究结果表明，放射状裂纹的出现与 PVT 生长过程中晶体微管密度紧密相关。 The research results show that the generation of radial cracks is closely associated with the density of micropipes in the crystal during PVT growth.
42649 在晶体生长初期，晶体生长平台平铺至尺寸较大的微管后形成微裂纹，这些微裂纹会随着晶体生长中的应力释放而沿晶体径向增殖、汇聚，最终与径向上的其他微裂纹连接成宏观放射状裂纹。 It was observed that in the initialgrowth stage, microcrack was generated after the crystal growth platform stepping to some large-size micropipes, which started to propagate and converge along the radial direction of the crystal as the stress released in the process of crystal growth until it connects with other microcracks in the radial direction toform the macroscopic radial cracks.
42650 通过提高 SiC 籽晶质量 ( 低微管密度) 、优化生长工艺参数可有效抑制放射状裂纹的产生。 The generation of the radial cracks can be effectively suppressed byusing high quality (micropipe-free) SiC seeds and optimizing growth process parameters.
42651 采用垂直梯度凝固 ( VGF) 法生长的 InP 单晶晶锭中部出现气孔， Pores were found in the middle of the InP single crystal ingot grown by the vertical gradient freeze (VGF) method.
42652 观察了气孔的形成过程，解释了气孔的产生机理，分析了晶体中气孔对晶体质量的影响。 The formation process of pores was observed, the formation mechanism ofpores was explained, and influences of pores on the crystal quality was analyzed.
42653 采用扫描电子显微镜( SEM) 、X 射线衍射 ( XＲD) 、光致发光谱、化学腐蚀法和霍尔测试系统对 InP 样品的均匀性、结构特性、发光特性、位错密度和电学特性进行测试分析。 Scanning electron microscope (SEM) , X-ray diffraction (XＲD) , photoluminescence spectrum, chemical etching method and Halltest system were used to test and analyze the uniformity, structure, luminescence, dislocation density andelectrical properties of the InP samples.
42654 结果表明，气孔周围磷含量较高，气孔周围 XＲD 摇摆曲线的平均半峰全宽为 65. 97″，比化学配比 InP 晶片高 1. 3 倍; The results show a high phosphorus content around the pore, andthe average full width at half-maximum of XＲD rocking curves around the pore is 65.97″, which is 1.3 times wider than that of the stoichiometric InP ratio wafer;
42655 位错密度为2 134 cm－2，比化学配比 InP 晶片高 10 倍; the dislocation density is 2 134 cm－2, whichis 10 times higher than that of the stoichiometric InP ratio wafer;