ID 原文 译文
42636 该ＲF 开关电路非常适用于 4G/5G 无线基础设施、卫星通信终端设备以及其他高性能射频应用系统。 The ＲF switch circuit is suitable for the 4G/5G wireless infrastructure, satellite communication terminal equipment and other high-performance ＲF applications.
42637 目前倒装芯片用陶瓷外壳的表面处理工艺以化学镀镍/浸金 ( ENIG) 为主，而 ENIG带来的黑盘现象使封装产品面临润湿不良和焊接强度不足等一系列问题。 At present, electroless nickel /immersion gold (ENIG) is the main surface finish processfor flip chip ceramic package, but the " black pad" caused by ENIG makes the packages facing seriesproblems such as poor wetting and insufficient soldering strength.
42638 化学镀镍/化学镀钯/浸金 ( ENEPIG) 是 ENIG 的一种改进方案，可有效避免黑盘现象。 Electroless nickel /electrolesspalladium /immersion gold (ENEPIG) is an improved solution of ENIG, which can effectively avoid" black pad" .
42639 对分别采用 ENIG 和 ENEPIG 镀层的陶瓷外壳样品在外观、微观形貌以及焊接强度等方面进行了对比，采用 ENEPIG 镀层样品的表现优于采用 ENIG 镀层的样品。 Ceramic packages with ENIG and ENEPIG plating were compared in terms of appearance, micromorphology and soldering strength.It is found that the samples with ENEPIG plating perform betterthan the samples with ENIG plating.
42640 对采用 ENEPIG 镀层的外壳样品进行了芯片贴装，并进行了热冲击、温度循环等一系列试验，试验合格率 100%，说明该方案可以满足器件级鉴定检验要求。 Chips were mounted on the packges with ENEPIG plating, and a series of tests such as thermal shock and temperature cycling were carried out.The test pass rate is 100%, which indicates that ENEPIG can meet the requirements of device level identification and inspection.
42641 验证结果表明，ENEPIG 在高密度陶瓷封装领域具有良好的应用前景。 The verification results show that ENEPIG has a good application prospect in the field of high density ceramicpackaging.
42642 设计了 GaN 基具有超结结构的电流孔径垂直电子晶体管 ( SJ CAVET) 和具有梯度掺杂超结结构的电流孔径垂直电子晶体管 ( GD-SJ CAVET) 。 A GaN-based super junction current aperture vertical electron transistor (SJ CAVET)and a GaN-based gradient doping super junction current aperture vertical electron transistor (GD-SJCAVET) were designed.
42643 采用 Silvaco TCAD 软件对两种器件的电学特性进行了仿真。 Electrical characteristics of the two devices were simulated by Silvaco TCAD software.
42644 与 SJ CAVET 相比，GD-SJ CAVET 在导通时具有更大的电流密度和更宽的电流路径，并得到分布更均匀的电场，因此器件的击穿特性和导通特性均得到了较大改善。 Compared with the SJ CAVET, GD-SJ CAVET has a higher current density and a wider currentpath during conduction, and can also obtain a more evenly distributed electric field, both breakdowncharacteristic and conduction characteristic of the device are significantly improved.
42645 相比SJ CAVET，当 GD-SJ CAVET 梯度掺杂区域数量为 3、n 柱顶部区域的掺杂浓度为 0. 5×1016 cm－3时，器件的比导通电阻降低了 27. 3%，击穿电压提升了 27. 7%。 Compared with the SJCAVET, when the number of GD-SJ CAVET gradient doping regions is 3 and the doping concentration ofthe top region of the n-pillar is 0.5×1016 cm－3, the specific on-resistance of the device is reduced by 27.3%, and its breakdown voltage is increased by 27.7%.