ID 原文 译文
42626 为了提高大功率 IPM 在短路故障情况下快速检测电流的能力,设计了一种新型内部集成分流电阻的 IPM 拓扑结构,并制作了 1 700 V/150 A IPM。 In order to improve the ability of high-power IPM to fast detect current in the event of a short-circuit fault, a newIPM topological structure with the internal integrated shunt resistance was designed, and an IPM with1 700 V/150 A was fabricated.
42627 通过校准电路对分流电阻阻值进行校正和测试。 The shunt resistance was calibrated and tested by using the calibrationcircuit.
42628 结合 IPM 设计了相应的电流检测电路,并在双脉冲测试平台对电流检测电路进行了验证。 The corresponding current detection circuit was designed with IPM, and the current detection circuit was verified on the double pulse test platform.
42629 比较了传统电流检测方法和内部集成分流电阻电流检测方法,以分析实时检测集电极电流。 The traditional current detection method and the internal integrated shunt resistance current detection method were compared to analyze the real-time detectionof the collector current.
42630 最后验证了所设计电路可以实时检测集电极电流,并通过 IPM 发生过流时,电流检测电路可以实时检测电流,并给驱动发送故障信号。 Finally, it is verified that the designed circuit can detect the collector current inreal time, and when an overcurrent occurs through the IPM, the current detection circuit can detect thecurrent in real time and send a fault signal to the driver.
42631 该方法对大功率 IPM 电流检测技术具有重要的参考价值。 The proposed method has an important referencevalue for high-power IPM current detection technology.
42632 基于 180 nm 绝缘体上硅 ( SOI) CMOS 工艺,设计并制作了一款 50 Ω 吸收式单刀双掷射频开关。 Based on the 180 nm silicon-on-insulator (SOI) CMOS process, a 50 Ω absorptive single-pole double-throw RF switch was designed and fabricated.
42633 开关电路由两个对称的射频传输通道组成,在 500 kHz 8 GHz 频率内具备优异的隔离度及插入损耗性能。 The switch circuit was comprised of twosymmetric RF transmit channels and had excellent performances of isolation and insertion loss in the frequency range of 500 kHz to 8 GHz.
42634 采用两级开关结构用于提高隔离度,并通过将电源管理电路的晶体管偏置在亚阈值区域以达到超低的功耗。 Two-stage switch structure was adopted to improve isolation and ultralow power consumption was achieved by biasing the power management circuit transistor at subthresholdregion.
42635 测试结果表明,在 6 GHz 频点的插入损耗为 0. 55 dB,隔离度为 53 dB,反射系数为-15 dB,0. 1 dB 压缩点的输入功率为 33 dBm,而功耗不足 300 μW。 The test results show that at 6 GHz the insertion loss is 0.55 dB, the isolation is 53 dB, the reflection coefficient is -15 dB, the input power is 33 dBm at 0.1 dB compression point, and the powerconsumption is less than 300 μW.