ID 原文 译文
42616 使用该方法制备的 OECT 具有较好的重复性。 The OECT prepared by this method exhibitsa good repeatability.
42617 最后，将微电极对的个数增加到 5 对，制备了 1×5OECT 阵列器件，OECT 阵列的性能具有较好的均一性。 Finally, by increasing the number of microelectrodes to 5 pairs, 1×5 OECT array devicesare prepared, and the performance of the OECT array has better uniformity.
42618 采用原子层沉积 ( ALD) 技术，以四氯化钛和水为前驱体，在钠钙玻璃衬底上沉积TiO2 薄膜，并进行微波退火处理。 Using titanium tetrachloride and water as the precursors, TiO2 thin films were depositedon the sodium calcium glass substrate by atomic layer deposition (ALD) technology and microwave annealing.
42619 通过拉曼光谱、紫外 － 可见分光光度计、X 射线衍射仪( XＲD) 和原子力显微镜 ( AFM) 等，对不同微波退火温度下 TiO2 薄膜的表面形貌、物相结构和光学性能进行了表征。 Surface morphologies, phase structures and optical properties of TiO2 thin films at different microwave annealing temperatures were investigated by Ｒaman spectra, ultraviolet-visiblespectrophotometer, X-ray diffraction (XＲD) and atomic force microscopy (AFM) .
42620 结果表明，所制备的样品为锐钛矿型 TiO2 薄膜，微波退火温度达到500 ℃时晶粒尺寸最大，为 21. 71 nm。 The results show that the prepared samples are anatase TiO2 thin films, the maximum size of grain (21.71 nm) is obtainedwhen the microwave annealing temperature reaches 500 ℃ .
42621 其拉曼光谱的 144 cm－1峰位没有发生偏移，但强度略有变化。 The 144 cm－1 peak position of the Ｒamanspectra does not shift, but the intensity changes slightly.
42622 随着微波退火温度的升高，TiO2 薄膜的透过率先下降后升高，折射率和消光系数则先增加后下降。 With the increase of the microwave annealingtemperature, the transmittance of the TiO2 thin film decreases first and then increases, while therefractive index and the extinction coefficient increase first and then decrease.
42623 拟合得到的 TiO2 薄膜的禁带宽度从 3. 43 eV 降到 3. 17 eV。 The band gap width obtained by fitting is reduced from 3.43 eV to 3.17 eV.
42624 通过 AFM 观察到微波退火促进了原子重新排列，改善了表面粗糙度，形成了均匀的锐钛矿型 TiO2 薄膜。 AFM images show that microwave annealing promotes atom rearrangement and improves surface roughness, and a uniform anatase TiO2 thin film isformed.
42625 智能功率模块 ( IPM) 是电力电子设备中的核心器件，为了保证系统安全可靠地运行，IPM 电流检测尤为重要。 Intelligent power module (IPM) is the core device of power electronic equipment.IPMcurrent detection is particularly important to ensure the safe and reliable operation of the system.