ID 原文 译文
42586 该方法为制备高质量 GOI 材料提供了一种新思路。 This method provides a new way to prepare high quality GOI materials.
42587 针对三态内容可寻址存储器 ( TCAM) 高成本、高功耗、路由表更新维护复杂以及搜索结果返回单一等问题，提出了一种使用静态随机存储器 ( SＲAM) 和自适应矩阵硬件算法逻辑的搜索芯片设计新技术。 Aiming at the problems of high cost, high power consumption, complex maintenance ofrouting table updates and single return of search results, a new design technique of search chip with staticrandom-access memory (SＲAM) and self-adaptive matrix hardware algorithm logic was proposed for ternary content addressable memory (TCAM) technology.
42588 该技术使用 SＲAM 快速存储路由表项等信息， SＲAM was used to quickly store information suchas routing table entries.
42589 使用硬件逻辑实现软件算法逻辑功能以提高芯片处理速度。 The hardware logic was also used to implement the software algorithm logic function to improve the chip processing speed.
42590 搜索芯片基于 UMC 40 nm 低功耗 1P8M CMOS 工艺制造，核心电压为 1. 1 V，I/O 电压为 3. 3 V，总体芯片面积为 200 mm2。 The search chip with an area of 200 mm2 was fabricated basedon UMC 40 nm 1P8M CMOS process with low power consumption.The core voltage is 1.1 V, the I/Ovoltage is 3.3 V.
42591 测试结果表明，芯片路由查找时可以快速命中和返回 12 个并行搜索结果，单搜索性能为 500 Msps ( million search per second) ，并行搜索性能为 6 Bsps ( billion search per second) ，可用于骨干网络建设和通信领域。 The test results show that the chip routing lookup can quickly hit and return 12 parallelsearch results, with a single search performance of 500 Msps (million search per second) and a parallelsearch performance of 6 Bsps (billion search per second) , which can be used in backbone network construction and communication fields.
42592 随着三维集成技术的飞速发展，硅通孔 ( TSV) 缺陷的检测问题不容忽视。 With the rapid development of 3D integration technology, the problem of through siliconvia (TSV) defect detection cannot be ignored.
42593 提出了一种新型无损 TSV 缺陷检测方法， A new TSV defect non-destructive detection method was proposed.
42594 该方法采用混合极限学习机模型对 TSV 缺陷的 S 参数进行训练分类，用来预测 TSV 发生空洞缺陷的大小及高度、发生针孔缺陷的大小及高度及发生微衬底未对齐缺陷的偏移量。 A hybrid extreme learning machine model was used to train and classify the S parameters of TSV defects to predict the size and height of the void defect and pinhole defect, and the offset of the micro substrate misalignment.
42595 仿真结果表明，所提出的方法在 TSV 缺陷检测过程中可以避免对被测样品的损坏， The simulation results show that the proposed method can avoid the damage to thetested samples during the TSV defect detection process.