ID 原文 译文
42576 电化学实验表明，采用不同络合剂时，随着 pH 值升高，开路电位逐渐变大，电荷传递电阻逐渐增大， The electrochemical experiments show that with different complexing agents, the open circuit potential decreases withthe increase of pH value, and the charge transfer resistance gradually increases.
42577 这是由于 Co表面的氧化物如四氧化三钴、氢氧化高钴增多，钝化膜逐渐加厚且更为致密，络合剂的络合作用减弱。 This is due to the increase of the oxide on the surface, such as cobaltosic oxide and the coballtic hydroxide, the thickening ofthe passive film and the decrease of complexing effect of complexing agent.
42578 同时，在 pH 值为 8 时，采用甘氨酸作为络合剂时，Co 的开路电位为负值 ( －0. 428 V) ，电荷传递电阻为 0. 943 9 Ω， When the pH value is 8 andthe glycine is used as the complexing agent, the open circuit potential of Co is negative (－0.428 V) andthe charge transfer resistance is 0.943 9 Ω.
42579 表明 Co 表面氧化膜薄且致密性差，更容易被腐蚀去除。 The results show that the oxide film on the surface of Co isthin and less dense, which is easier to be removed by corrosion.
42580 利用离子剥离技术在 Ge 晶圆上制备绝缘体上锗 ( GOI) 时，高剂量 H+注入会导致Ge 晶格损伤，而且剥离后 Ge 表面粗糙度较大。 During the preparation of germanium on insulator (GOI) on Ge wafer by conventionalion cut technology, the lattice damage of Ge was caused by high dose H+ implantation, and the surfaceroughness of Ge after exfoliation was larger.
42581 为了解决以上问题，在 Si 衬底上外延 Ge /Si0. 7Ge0. 3 /Ge异质结构代替纯 Ge 制备 GOI， In order to solve the above problems, Ge /Si0.7 Ge0.3 /Gehetero-structure on Si substrate was used to prepare GOI instead of pure Ge.
42582 研究了异质结构样品有效剥离的临界 H+注入条件和相应的 GOI 表面粗糙度。 The critical H+ implantationconditions for film exfoliation of hetero-structure samples and the surface roughness of Ge after exfoliationwere studied.
42583 使用扫描电子显微镜 ( SEM) 、透射电子显微镜 ( TEM) 和原子力显微镜 ( AFM) 对样品在 H+注入和剥离后的裂缝形成过程、表面形貌、界面晶格损伤等进行观察和表征。 The cracks formation process, the surface morphology and the interface lattice damage after H+ implantation and film exfoliation were observed and characterized by scanning electron microscope(SEM) , transmission electron microscope (TEM) and atomic force microscope (AFM) .
42584 实验结果表明，由于超薄 Si0. 7Ge0. 3层对注入 H+的吸附作用，剥离临界 H+注入剂量由 5. 0×1016 cm－2下降到 3. 5×1016 cm－2，且在降低注入成本的同时也有效减少了 H+注入对 Ge 晶格的损伤; The experiment results indicate that due to the H+ trapping effect of ultra-thin Si0.7Ge0.3 layer, the critical H+ implantationdose for ion cut drops from 5.0×1016 cm－2 to 3.5×1016 cm－2, which may reduce the process costs efficiently as well as attenuating the crystal damages induced by ion implantation.
42585 由于剥离只发生在超薄 Si0. 7Ge0. 3层，GOI 表面粗糙度降低到 1. 42 nm ( 10 μm×10 μm) 。 Because the film exfoliationoccurs along the ultra-thin Si0.7 Ge0.3 layer, the surface roughness of the GOI is as low as 1.42 nm(10 μm×10 μm) .