ID 原文 译文
42566 芯片封装后的整体热阻为 28 ℃ /W，满足芯片可靠性应用的需求。 The total thermal resistance of the packaged chip is28 ℃ /W, which meets the needs of chip reliability applications.
42567 GaN 材料是研制微电子器件、光电子器件的新型半导体材料， GaN material is a new semiconductor material for developing microelectronic devices andoptoelectronic devices.
42568 在其单晶材料的研制过程中，掺杂剂 Mg 的含量对生长 p 型 GaN 有重要影响，所以对 Mg 浓度的精确测定至关重要。 During the development of its single crystal material, the content of the dopant Mghas an important influence on the growth of p-type GaN, therefore the accurate determination of Mg concentration is crucial.
42569 采用相对灵敏度因子法，以离子注入样品为参考样品，对 GaN 单晶中 Mg 元素含量的二次离子质谱 ( SIMS) 定量分析方法进行了研究， The secondary ion mass spectrometry (SIMS) quantitative analysis method of Mg contentin GaN single crystal was studied by using the relative sensitivity factor method and with the ion implantation sample as the reference sample.
42570 并通过改变扫描面积，使 GaN 单晶中 Mg 元素浓度的检测限达到 5. 0×1015 cm－3。 The detection limit of Mg content in GaN single crystal was up to 5.0×1015 cm－3 by changing the scanning area in the SIMS test.
42571 该方法具有高稳定性 ( 精密度小于 10%) 和可靠性，在没有可溯源参考样品的情况下，可自制参考样品实现对 GaN 晶体中 Mg 含量的 SIMS 定量分析。 The quantitative SIMS analysis method has highstability (precision is less than 10%) and reliability, and can be used in the quantitative analysis of Mgcontent in GaN by SIMS with self made reference sample without traceable reference sample.
42572 该方法成为GaN 单晶中 Mg 杂质含量的可行的检测方法之一。 This methodhas become one of the feasible detection methods for the content of Mg impurity in GaN single crystal.
42573 研究不同络合剂 ( 如甘氨酸 ( Gly) 、柠檬酸 ( CA) 、酒石酸 ( TA) ) 在不同 pH 值的抛光液中对钴 ( Co) 化学机械抛光 ( CMP) 去除速率的影响。 The effects of different complexing agents, such as glycine (Gly) , citric acid (CA)and tartaric acid (TA) on the removal rate of cobalt (Co) in chemical mechanical polishing (CMP)with different pH values of slurries were studied.
42574 研究结果表明，采用不同络合剂时，随着 pH 值的升高，Co 的去除速率均逐渐降低。 The research results show that the removal rate of Cogradually decreases with the increase of pH value by using different complexing agents.
42575 当采用甘氨酸作为络合剂时，Co 的去除速率优于柠檬酸和酒石酸，当 pH 值为 8 时，Co 的去除速率可达 628 nm /min，粗糙度为1.08 nm，随着 pH 值由 8 升高到 10，Co 的去除速率降低到 169. 9 nm /min。 When using glycine as the complexing agent, the removal rate of Co is higher than that of citric acid and tartaric acid.When the pH value is 8, the removal rate of Co reaches 628 nm /min, the roughness is 1.08 nm.Withthe increase of pH value from 8 to 10, the removal rate of Co decreases to 169.9 nm /min.