ID 原文 译文
42556 结果显示，所制备的 4×4 4H-SiC APD 阵列不但具有较大的像元面积，而且具有较好的紫外探测性能、较高的像元良率和较好的击穿电压一致性。 The results show that the fabricated 4×4 4H-SiC APD arrays with large-size pixels exhibit excellent UV detection performance, high pixel yield and high-uniformity breakdown voltage.
42557 室温下，像元的雪崩增益高达 105 以上，单位增益最大外量子效率为 70%， At room temperature, high avalanche gain of over 105 is obtained for the pixels in the array.The unity-gain maximumexternal quantum efficiency (QE) is 70%.
42558 阵列中 16 个像元均实现雪崩硬击穿，像元良率达到 100%， Moreover, all of the 16 pixels show hard avalanche breakdown, resulting in a pixel yield of 100%.
42559 击穿电压保持高度一致，均为 157. 2 V，在 95%击穿电压时像元的暗电流全部小于 1 nA。 A high-uniformity breakdown voltages are achieved at 157.2 V, and thedark currents of pixels at 95% breakdown voltage for all the pixels are below 1 nA.
42560 4H-SiC APD 阵列性能的提高将为 4H-SiC APD 在紫外成像领域的应用奠定基础。 The improvements of4H-SiC APD array performances will lay the foundation for UV imaging applications of 4H-SiC APDs.
42561 针对毫米波频段放大器芯片，提出了一种基于有机封装基板和液晶聚合物盖帽的空气腔型封装结构，解决了塑封器件在毫米波频段阻抗失配、插入损耗大和热阻高等问题，且降低了封装成本。 An air-cavity package structure based on organic package substrates and liquid crystalpolymer caps for millimeter wave amplifier chips was proposed, which solved the problems of impedancemismatch, large insertion loss and high thermal resistance of plastic package devices in the millimeterwave band, and reduced package cost.
42562 通过电磁场仿真，优化了封装管脚在毫米波频段的阻抗特性，降低了射频管脚的阻抗失配，优化了芯片焊盘与封装基板之间的键合方案，降低了封装整体的插入损耗。 Through electromagnetic field simulation, the impedance characteristics of package pins in the millimeter wave band were optimized, the impedance mismatch of ＲF pinswas reduced, the bonding scheme between the chip pad and the package substrate was optimized, andthe overall insertion loss of the package was reduced.
42563 采用条状通孔和基板减薄方法，降低了封装结构的热阻。 The bar-vias and substrate thinning were used to reduce the thermal resistance of the package structure.
42564 在 24 ～ 30 GHz，封装芯片小信号增益达到21 dB，饱和输出功率达到 26 dBm。 The packaged chip has a small signal gain of 21 dBand a saturated output power of 26 dBm in 24－30 GHz.
42565 与裸芯片相比，封装芯片的饱和输出功率仅损失了1 dB。 Compared with the bare chip, the saturated output power of the packaged chip losts only 1 dB.