ID 原文 译文
42546 具有系统结构简单、成本低、集成度高的优点。 It has the advantages ofsimple system structure, low cost and high integration.
42547 研究了单面抛光中有蜡贴片工艺对抛光后 4 英寸 ( 1 英寸= 2. 54 cm) SiC 晶片总厚度变化 ( TTV) 和翘曲度的影响。 The influences of wax mounting process in single side polishing on the total thickness variation (TTV) and warpage of the 4-inch (1 inch = 2.54 cm) SiC wafer after polishing were studied.
42548 分别选择固体蜡和液体蜡进行贴片实验，采用平面度测量仪检测加工前后晶片的 TTV 和翘曲度，采用数显千分表测量贴片及单面抛光后晶片表面 5 点厚度的变化。 The mounting experiments were carried out by using solid wax and liquid wax, respectively.TTV and warpageof the wafers before and after processing were measured by using a flatness measuring instrument, and the thickness variation of five points on wafers was measured by using a digital display dial gauge after mounting and single side polishing.
42549 发现采用液体蜡贴片时，加工晶片的 TTV 较好，蜡层的均匀性是影响晶片 TTV 的主要原因， It is found that the TTV of the wafers is better when mounting by liquid waxand the uniformity of the wax layer is the chief factor affecting the TTV of wafers.
42550 蜡层厚度均匀性差会使晶片 TTV 变差，同时也会使晶片发生不规则的形变。 Poor thickness uniformity of the wax layer may make the TTV of the wafers worse and also cause irregular deformation of the wafer.
42551 并且分析了旋涂参数对液体蜡蜡层均匀性的影响。 The influence of spin parameters on the uniformity of the liquid wax layer was analyzed.
42552 结果表明，在滴蜡时间为 2. 3 s、低速旋转速度为 700 r /min、低速旋转时间为 6 s、高速旋转速度为 3 000 r /min、高速旋转时间为 7 s 的条件下，贴片表面 5 个点的厚度偏差小于 2 μm，加工晶片的 TTV 小于 5 μm。 The results show that the thickness deviation of the five points on the wafer surface after mounting is less than 2 μmand the TTV of the processing wafer is less than 5 μm under the conditions of the dispensing time of2.3 s, low-speed rotation speed of 700 r /min, low-speed rotation time of 6 s, high-speed rotation speedof 3 000 r /min and high-speed rotation time of 7 s.
42553 碳化硅 ( SiC) 雪崩光电二极管 ( APD) 固态紫外 ( UV) 探测器在很多领域具有重要的潜在应用价值。 Silicon carbide (SiC) avalanche photodiode (APD) -based solid-state ultraviolet (UV)detectors are of very importance in many potential applications.
42554 针对 4H-SiC APD 阵列目前面临的像元良率较低和击穿电压一致性差等问题，基于吸收电荷倍增分离结构，设计制备了一款 4×4 的 4H-SiC APD 阵列芯片， To solve the problems of low pixel yieldand low uniformity of the breakdown voltage for 4H-SiC APD arrays, a 4×4 4H-SiC APD array chip wasdesigned and fabricated based on the separate absorption charge multiplication epi-structure.
42555 并对其紫外探测性能和阵列像元的一致性进行了测试与分析。 In addition, the UV detection performance of the array chips and the uniformity of pixels in the array were tested andanalyzed.