ID 原文 译文
42516 多晶硅广泛应用于太阳电池领域。 Multi-crystalline silicon is widely used in the field of solar cells.
42517 多晶硅铸锭的结晶质量决定了后续晶锭的加工和光伏组件的性能及寿命。 The crystalline quality ofmulti-crystalline silicon ingots determines the subsequent ingot processing and the performance and life ofphotovoltaic devices.
42518 碳化硅和氮化硅是多晶硅铸锭中最常见的两种非金属夹杂物。 Silicon carbide and silicon nitride are the two most common non-metallic inclusionsin multi-crystalline silicon ingots.
42519 系统概述了多晶硅铸锭中氮化硅及碳化硅的形貌特征、微观分布形态及宏观分布规律等研究进展,介绍了两种夹杂物的伴生过程。 The research progress of morphological characteristics, microdistribution patterns and macro-distribution laws of silicon nitride and silicon carbide in multi-crystallinesilicon ingots are systematically reviewed, and the associated processes of two kinds of inclusions are introduced.
42520 根据多晶硅铸锭的生长条件,探讨了其中的碳和氮元素的来源及碳化硅和氮化硅夹杂物对多晶硅铸锭加工过程的影响。 Based on the growth conditions of multi-crystalline silicon ingots, the sources of carbon and nitrogen elements and the influence of silicon carbide and silicon nitride inclusions on the processing ofmulti-crystalline silicon ingots are discussed.
42521 最后,从生长条件及工艺方法等方面分析了关于抑制和消除碳化硅和氮化硅夹杂物的研究进展情况。 Finally, the research progress of restraining and eliminatingsilicon carbide and silicon nitride inclusions is analyzed from the aspects of growth conditions and processmethods.
42522 蓝光 LED 的光效衰减可以使器件在高电流密度下的发光效率急剧降低。 The efficiency droop of blue LEDs can lead to the dramatical reduction of the luminescence efficiency at high current density.
42523 研究了 GaN材料中不同位错类型对蓝光 LED 光效衰减效应的影响。 The influences of different dislocation types on the efficiencydroop effect of blue LEDs were studied.
42524 通过控制物理气相沉积 AlN 缓冲层厚度及 GaN 缓冲层的有无,得到了两组不同螺位错和刃位错密度的 GaN 样品,其中螺位错密度为1. Two groups of GaN samples with different screw and edge dislocation densities were grown by controlling the thickness of the physical vapor deposition AlN buffer layerand the presence or absence of the GaN buffer layer.
42525 5×107 ~1×108 cm-2,而刃位错密度为 2×108 7×108 cm-2。 The screw dislocation density ranges from 1.5 ×107 cm-2 to 1×108 cm-2, and the edge dislocation density ranges from 2×108 cm-2 to 7×108 cm-2.