ID 原文 译文
42496 制备了一款专用集成电路 ( ASIC) ，并使用60Co 源 γ 射线对其进行 3×103 Gy ( Si) 总剂量辐照试验。 An application specific integrated circuit(ASIC) was prepared and subjected to a 3×103 Gy (Si) total dose irradiation test with 60Co source γrays.
42497 结果表明，HTO / SiO2 复合栅能够满足电路的阈值电压、功耗、延时等参数要求，并具有较好的抗总剂量辐射性能。 The results show that the HTO / SiO2 composite gate can meet the threshold voltage, power consumption, delay and other parameters of the circuit and improve hardness for total dose radiation.
42498 由于 SiO2 层和 HTO 层中缺陷线的错位排列，避免了复合栅从HTO 上表面到 SiO2 下表面的漏电通路，明显减少了电路与栅氧化层相关的早期失效。 Due to themisalignment of the defect lines in the SiO2 layer and HTO layer, the current leakage path of the composite gate from the HTO upper surface to the SiO2 bottom surface is avoided and the infant mortality of thecircuit related to gate oxide is significantly reduced.
42499 HTO / SiO2复合栅结构对于小尺寸 ( 亚微米) CMOS 和特种工艺器件的栅氧化层可靠性和抗辐射性能的提升具有一定的借鉴价值。 The HTO / SiO2 composite gate structure has a certainreference value for the improvement of gate oxide reliability and radiation hardness for the small-size(submicron) CMOS and special process device.
42500 采用熔融氢氧化钠对生长在蓝宝石衬底上的 InxGa1－xN 外延层进行化学腐蚀，通过深紫外光致发光光谱仪测量 InxGa1－xN 的激发光谱来控制其腐蚀过程， InxGa1－x N epitaxial layer grown on the sapphire substrate was chemically etched byfusion sodium hydroxide.The etching process of InxGa1－x N was controlled by measuring its excitationspectra with the deep ultraviolet photoluminescence spectrometer.
42501 用硫酸和氨水对腐蚀 InxGa1－xN后得到的的腐蚀溶液进行酸度调节， The acidity of the etching solution achieved after etching InxGa1－x N was adjusted with sulfuric acid and ammonia water.
42502 加入碘化钾、乙基紫与铟离子形成蓝色的离子缔合物，用苯将离子缔合物萃取至有机相， The potassiumiodide, ethyl violet and indium ion were added to form blue ion association complex and it was extractedinto organic phase by benzene.
42503 采用分光光度计测量腐蚀溶液在 619 nm 波长处的吸光度来计算外延层中的 In 含量。 The absorbance of the etching solution at 619 nm wavelength was measured by spectrophotometer to calculate the indium content in the epitaxial layer.
42504 使用该方法测试 6 次，测试结果的标准偏差为 0. 25%，测量结果与卢瑟福背散射法的测量结果基本一致，说明该方法具有较高的精密度和准确度。 The standard deviation of the 6 tests results of this method is 0.25%, which is basically consistent with that of the Ｒutherford backscattering method, indicating that this method has high precision and accuracy.
42505 该方法可用于 InxGa1－xN外延层中的 In 含量的准确测量。 The method canbe used for the accurate measurement of indium content in the InxGa1－xN epitaxial layer.