| ID | 原文 | 译文 |
| 42476 | 测试结果表明，GaN 外延材料 ( 002) 面和( 102) 面的半高宽 ( FWHM) 分别为 204″和 274″，表面粗糙度 ( 扫描范围为 5 μm×5 μm) 为0. 18 nm，GaN 外延材料具有较好的晶体质量。 | The test results show that the full width at half maximum (FWHM) values of GaNepitaxial materials (002) and (102) planes are 204″ and 274″, respectively, and the surface roughness(5 μm×5 μm of scanning range) is 0.18 nm, which indicate that the GaN epitaxial material has good crystalline quality. |
| 42477 | 拉曼光谱测试结果显示，6 英寸 GaN 外延材料应力为压应力，并得到有效控制。 | The Raman spectrum test results show that the stress over the 6-inch GaN epitaxy material iscompressive stress and is effectively controlled. |
| 42478 | 非接触霍尔测试结果显示 AlGaN /GaN HEMT 结构材料二维电子气 ( 2DEG) 迁移率为 2 046 cm2 / ( V·s) ，面密度为 6. 78×1012 cm－2，方块电阻相对标准偏差为1.85%，结果表明，制备的 6 英寸 GaN HEMT 结构材料具有良好的电学性能。 | The contactless Hall test results show that the AlGaN/GaNHEMT structural material has a two-dimensional electron gas (2DEG) mobility of 2 046 cm2 /(V·s) , asurface density of 6.78×1012 cm－2, and a relative standard deviation of square resistance of 1.85%, indicating that the 6-inch GaN HEMT structural material has good electrical performance. |
| 42479 | 为了精确地表征器件特性，提出了一种直接提取 T 型异质结双极型晶体管 ( HBT)小信号模型参数的方法。 | In order to accurately characterize device characteristics, a method for direct extractionof small-signal model parameters of T-type heterojunction bipolar transistors (HBTs) was proposed. |
| 42480 | 该方法仅依赖于 S 参数测试数据，采用精确的闭式方程式直接提取电路元件参数。 | Thismethod only relies on S-parameter test data, and the precise closed-form equation is used to directly extract circuit component parameters. |
| 42481 | 该方法简单、易于实施。 | The method is simple and easy to implement. |
| 42482 | 首先使用开路短路测试结构提取焊盘寄生电容和电感的值，然后用截止状态和 Z 参数的方法提取外部电阻， | First, the open-shorttest structure was used to extract the values of the parasitic capacitance and inductance of the pad, andthen the external resistance was extracted by the off-state method and the Z-parameter method. |
| 42483 | 再去掉这些参数以简化电路模型，本征部分的电路元件采用剥离算法来确定参数值。 | Then, these parameters were removed to simplify the circuit model, and the intrinsic parameters values of thecircuit were determined by the peeling algorithm. |
| 42484 | 采用 1 μm×15 μm 的 InP HBT 对该算法的有效性进行验证， | The effectiveness of the algorithm was verified by a1 μm×15 μm InP HBT. |
| 42485 | 结果表明，在 0. 1 ～ 40 GHz 频率范围内，模型仿真结果准确地拟合了器件测试结果。 | The results show that the simulation results of the model accurately fit the test results of the device in the frequency range of 0.1－40 GHz |