ID 原文 译文
42466 测试结果表明，PGA 可提供－13. 6% ～16. 3%的可调增益范围，可以实现精准的 2 倍和 4 倍增益; The test results showthat the PGA which can accurately achieves 2 and 4 times gain provides an adjustable gain range of－13.6%－16.3%.
42467 POV 模块输出的电压具有－ 102 ～88 mV的调节幅度，可以实现 2. 25 V 和 0. 5 V 的精确输出。 The output voltage of the POV module has an adjustment range of －102－88 mV, andcan achieve precise output voltages of 2.25 V and 0.5 V.
42468 将该输出缓冲级电路应用于 MEMS电容读出电路中并对其进行精确的编程校准，可以满足整个电容传感器系统的高精度测量需求。 The output buffer stage circuit was applied tothe MEMS capacitance readout circuit and could be accurately programmed and calibrated, which canmeet the high-precision measurement requirements of the entire capacitance sensor system.
42469 采用电子束蒸镀在重掺杂 Si 衬底上制备了 150 nm 厚的 Ta2O5 薄膜，研究原位生长温度 ( 150，250 和 350 ℃ ) 和后退火工艺对 Ta2O5 薄膜性能的影响。 Ta2O5 thin films with a thickness of 150 nm were prepared on heavily-doped Si substratesby electron beam evaporation, and the effects of in-situ growth temperatures (150, 250 and 350 ℃) and post-annealing technology on the properties of Ta2O5 thin films were studied.
42470 X 射线衍射测试结果表明，当衬底原位温度控制在 350 ℃以下时，制备的 Ta2O5 薄膜均为无定形结构。 X-ray diffraction results showthat the prepared Ta2O5 thin films are all amorphous when the in-situ temperature of the substrate are below 350 ℃ .
42471 原子力显微镜和阻抗分析测试结果发现当衬底温度为 250 ℃时，Ta2O5 薄膜的表面均方根粗糙度最小，达到 0. 16 nm，同时具有最优的电学性能 ( 相对介电常数 24. 1，介电损耗低于 0. 01) 。 Atomic force microscopy and impedance analysis results indicate that when the substratetemperature is 250 ℃, the surface root-mean-square roughness of the Ta2O5 thin film is the smallest, reaching 0.16 nm, and it has the optimal electrical performance with the relative dielectric constant of 24.1 and the dielectric loss of less than 0.01.
42472 与原位控温相比，相同条件下后退火工艺处理得到的薄膜性能有所下降。 Compared with in-situ temperature control, the propertiesof the thin film prepared by post-annealing process under the same condition are decreased.
42473 研究结果表明，采用基于衬底原位控温的电子束蒸镀工艺可制备出性能优越的 Ta2O5 薄膜介电材料，有望应用于动态随机存储器等高性能器件。 The resultsshow that the Ta2O5 thin film dielectric material with excellent properties can be prepared by electronbeam evaporation process based on substrate in-situ temperature control, which exhibits promising applications in high performance devices such as dynamic random access memory.
42474 采用金属有机气相外延 ( MOVPE) 方法在 6 英寸 ( 1 英寸 = 2. 54 cm) SiC 衬底上生长了 GaN HEMT 材料。 GaN HEMT materials on 6-inch (1 inch = 2.54 cm) 4H-SiC substrate were grown by metalorganic vapor phase epitaxy (MOVPE) method.
42475 使用高分辨 X 射线衍射仪、原子力显微镜和微区拉曼光谱仪等对材料的表面形貌、晶体质量和应力进行了测试和表征。 The surface morphology, crystal quality and stress of the materials were measured and characterized by the high resolution X-ray diffractometer, atomic force microscopeand Ｒaman spectrometer.