| ID | 原文 | 译文 |
| 42456 | 测试结果表明，MGM-FLＲ 结构有效调制并优化了结终端区域的表面电场强度分布，SiC MOSFET 漏电流为 1 μA 时最大击穿电压达到 2 400 V，为理想平行平面结击穿电压的 91%。 | The test results show that the structure of MGMFLＲ effectively modulates and optimizes the distribution of the surface electric field strength in the junction terminal region, the maximum breakdown voltage of SiC MOSFET reaches 2 400 V at the leakagecurrent of 1 μA, which is 91% of the breakdown voltage of the ideal parallel plane junction. |
| 42457 | 器件的比导通电阻约为 36 mΩ·cm2，阈值电压为 2. 9 V。 | The specificon-resistance of the device is about 36 mΩ·cm2, and the threshold voltage is 2.9 V. |
| 42458 | 对制备的 SiC 功率 MOSFET进行了 150 ℃、168 h 的高温反偏 ( HTＲB) 可靠性测试评估，实验前后的击穿电压变化量不超过 100 V，初步验证了 MGM-FLＲ 结终端结构的鲁棒性和可行性。 | The reliability testof high temperature reverse bias (HTＲB) was carried out for the fabricated SiC power MOSFETs at150 ℃ for 168 h, the variation of breakdown voltage is less than 100 V before and after the test, whichpreliminarily verified the robustness and feasibility of the junction terminal structure of MGM-FLＲ. |
| 42459 | 基于硅片研磨后清洗工艺的方法和原理，通过分析硅片在加工过程中污染物的种类和硅片表面的吸附性质，配制出由氢氧化钾、烷基苯磺酸盐、聚氧乙烯烷基醚为原材料构成的清洗剂。 | Based on the method and principle of the cleaning process after silicon wafer grinding, by analyzing the type of contaminants and the adsorption properties of the silicon wafer surface during thefabrication process, a detergent composed of potassium hydroxide, alkylbenzene sulfonate and polyoxyethylene alkyl ether as raw materials was prepared. |
| 42460 | 分析了清洗剂原材料溶于水后的吸附状态，确定三种原材料的质量比为 10 ∶ 2 ∶ 2。 | The adsorption states of the detergent raw materialswere analyzed after being dissolved in water, the mass ratio of the three raw materials was determined tobe 10 ∶ 2 ∶ 2. |
| 42461 | 为减小清洗后硅片的表面粗糙度和表面划痕损伤，确定了最佳的硅片清洗温度为 65 ℃，清洗剂原材料溶于水后配制的清洗液的 pH 值为 10. 5，清洗时间为 180 s。 | In order to reduce the surface roughness and the surface scratch damage of the silicon waferafter cleaning, it was determined that the optimal cleaning temperature was 65 ℃, the pH value of thecleaning solution prepared after the detergent raw material dissolved in water was 10.5, and the cleaningtime was 180 s. |
| 42462 | 新型清洗液与传统硅片清洗液的对比实验表明，采用新的清洗液可明显降低硅片表面粗糙度，改善硅片表面划痕处的腐蚀损伤。 | The comparison experiment of the new and traditional silicon wafer cleaning solutions was carried out.The results show that the new one can significantly reduce the surface roughness of the siliconwafer and improve the corrosion damage of the scratches on the silicon wafer surface. |
| 42463 | 针对输出级电路增益和输出共模电压灵活可变的需求，提出了一种新型增益与共模电压可编程的输出缓冲级电路。 | Aiming at the requirements of the flexible and variable output stage circuit gain and output common-mode voltage, a new output buffer stage circuit with programmable gain and common-modevoltage was proposed. |
| 42464 | 电路由可编程增益放大器 ( PGA) 和采用自适应电流源与新型可编程电阻阵列的输出电压可编程 ( POV) 模块构成，具有增益和共模电压可调、输出精确的特点。 | The circuit consists of a programmable gain amplifier (PGA) and a programmableoutput voltage (POV) module which uses adaptive current source and a new programmable resistor array.It has the characteristics of adjustable gain and common-mode voltage and accurate output. |
| 42465 | 电路芯片基于标准 0. 15 μm CMOS 工艺设计制造。 | The circuitchip was designed and fabricated based on the standard 0.15 μm CMOS process. |