| ID | 原文 | 译文 |
| 42446 | 研制了一款 S 波段双通道薄膜体声波谐振器 ( FBAＲ) 滤波器， | A dual-channel film bulk acoustic resonator (FBAＲ) filter for S-band application was developed. |
| 42447 | 其两个通带频率分别为 ( 2 000 ± 45) MHz 和 ( 2 800 ± 45) MHz，在两个通道的输入、输出端分别加入匹配电路。 | The two passband frequencies are (2 000 ± 45) MHz and (2 800 ± 45) MHz, respectively.Matching circuits were added separately at the input /output ports of the two channels. |
| 42448 | FBAＲ 滤波器芯片采用阶梯型电路结构设计， | The ladder circuitstructure was adopted to design the FBAＲ filter chip. |
| 42449 | 采用声电磁协同仿真方法对各个通道的 FBAＲ 滤波器分别进行了仿真设计。 | The combined acoustic-electromagnatic simulaitonmethod was used to simulate and design the FBAＲ filters in each channel separately. |
| 42450 | 匹配电路采用由低通滤波器和高通滤波器构成的双工器方案实现。 | The matching circuits were realized by the diplexers composed of lowpass and highpass filters. |
| 42451 | 对印制电路板、FBAＲ 滤波器芯片和匹配电路进行了一体化仿真。 | The printed circuit boardlayout, FBAＲ filter chips and matching circuits were integrally simulated. |
| 42452 | FBAＲ 滤波器芯片采用自主的FBAＲ 标准工艺实现， | The FBAＲ filter chip wasrealized by the self-developed FBAＲ standard process. |
| 42453 | 双通道 FBAＲ 滤波器采用微波混合集成电路工艺实现，其体积为12.2 mm×12. 2 mm×4. 8 mm。 | The dual-channel FBAＲ filter with the volume of12.2 mm×12.2 mm×4.8 mm was implemented by microwave hybird integrated circuit process. |
| 42454 | 滤波器采用陶瓷外壳进行了气密封装，具有免调试、参数一致性好的特点，拓宽了 FBAＲ 滤波器的应用范围。 | The filter was hermetically sealed by a ceramic package.It has the advantages of adjust-free and good performanceconsistency, and has extended the application scope of FBAＲ filters. |
| 42455 | 设计了一种具有分组缓变间距场限环 ( MGM-FLＲ) 结终端结构的 SiC 功率 MOSFET，并基于国内现有的 SiC 电力电子器件工艺平台进行了流片，完成了 1 700 V/10 A SiC 功率MOSFET 样品的制备。 | A 1 700 V/10 A SiC power MOSFET with multiple-zone gradient modulation fieldlimiting ring (MGM-FLＲ) junction terminal structure was designed and fabricated based on the presentdomestic SiC power electronics device process platform. |