ID 原文 译文
42426 合成过程中，通过调节源炉升温的速度来控制磷泡内压力与环境压力，避免熔体倒吸堵住注入口引起炸泡，并最大程度地减少磷的损失; In the process of synthesis, the pressure in the phosphorus injector and the ambient pressure were controlled by adjusting the heatingspeed of the source furnace, so as to avoid the explosion of the phosphorus injector which was caused byphosphorus to condense in and plug the injector, and reduce the loss of phosphorus to the greatest extent.
42427 合成时熔体温度高于 1 370 K 会造成合成的多晶呈富铟状态、合成时间较长， During synthesis, the melt temperature higher than 1 370 K would result in indium-rich polycrystal and along period of synthesis time.
42428 且石英坩埚中的 Si 元素长时间在高温下会对熔体造成沾污，从而降低多晶纯度。 The element Si in the quartz crucible would stain the melt at a high temperature for a long period of time, and thus reduce the polycrystal purity.
42429 基于体硅微电子机械系统 ( MEMS) 工艺，采用多层基片集成波导 ( SIW) 谐振腔的垂直堆叠耦合结构研制了一款工作在 K/Ka 波段的 SIW 双工器。 A K/Ka band substrate integrated waveguide (SIW) duplexer which adopted the multilayer SIW resonant cavity vertically stacked coupling structure was developed based on bulk silicon microelectromechanical system (MEMS) process.
42430 实测结果表明:在 K 波段的接收通带内，该双工器插入损耗小于 1. 8 dB，带内回波损耗小于－15 dB; The test results show that the insertion loss and the in-bandreturn loss of the duplexer are less than 1.8 dB and － 15 dB respectively in the receive passband ofK-band.
42431 在 Ka 波段的发射通带内，其插入损耗小于 2 dB，带内回波损耗小于－12 dB;收/发隔离度大于 50 dB， The insertion loss and the in-band return loss of the duplexer are below 2 dB and －12 dB respectively in the transmit passband of Ka-band, and the receive /transmit isolation is above 50 dB.
42432 实测结果与仿真结果较吻合。 The test results are coincide with the simulation results.
42433 该体硅 MEMS SIW 双工器体积仅为 5. 8 mm×4. 4 mm×1. 0 mm，在满足性能指标要求的同时实现了小型化且易于与微波、毫米波系统集成。 The bulk silicon MEMS SIW duplexer with a volume of5.8 mm×4.4 mm×1.0 mm is miniaturized and easy to integrate with microwave and millimeter-wave systems while satisfying the requirements of indexes.
42434 该双工器的收/发输入、输出端口为异面结构，能够实现收/发信号的全双工垂直传输，符合目前瓦片式相控阵天线中信号的传输特点，具有良好的应用前景。 The receive /transmit input and output ports of the duplexer are in vertical structure which can realize vertical transmission of the full duplex receive and transmit signal, it accords with the signal transmission features of the tile type phase array antenna, and has agood application prospect.
42435 二硫化钼 ( MoS2 ) 具有与石墨烯类似的层状结构和优异的电学、光学特性，在光电器件和能量存储等领域具有广阔的应用前景。 Due to its similar layered structure as graphene, excellent electrical and optical properties, molybdenum disulfide (MoS2) has a broad application prospect in the fields of photoelectric devicesand energy storage.