ID 原文 译文
42416 利用原位监控系统，结合原子力显微镜 ( AFM) 和变温光致发光( PL) 谱研究了生长前端的 Ga 原子的表面活性作用对 AlGaN 薄膜的生长模式、表面形貌和光学性质的影响， The surfactant effect of Ga atoms at AlGaN growth front on the growth mode, surface morphology and optical properties of AlGaN films were investigated by using the in-situ monitoring system, atomic force microscope (AFM) and temperature-dependent photoluminescence (PL) spectrum.
42417 并通过二次离子质谱仪 ( SIMS) 探究了生长温度与 p 型 AlGaN Mg 掺杂浓度的变化关系及内在机理。 And the relation between the growth temperature and Mg-doping concentration of p-type AlGaN and its internalmechanism were explored by using secondary ion mass spectrometer (SIMS) .
42418 结果显示，Ga 原子不仅参与 AlGaN 的结晶，而且在薄膜生长和 Mg 掺杂中发挥着表面活性剂的作用，能够促进 Al 原子的迁移与并入。 It is revealed that Ga atomsnot only participate in the crystallization of AlGaN, but also play the role of surfactant in enhancing themobility and incorporation of Al atoms during the film growth and Mgdoping.
42419 Ga 原子作为表面活性剂有利于 AlGaN薄膜进行二维层状生长，改善 AlGaN 薄膜的表面形貌和光学特性; As a surfactant, Ga is beneficial to the two-dimensional layered growth of AlGaN films, and then improves the surface morphologiesand optical properties of AlGaN films.
42420 它还能够提高 Al 原子的并入效率，使 AlGaN 薄膜具有更短的发光波长。 It also can improve the incorporation efficiency of Al atoms andmake AlGaN films have shorter light-emitting wavelength.
42421 此外，适当降低 p 型 AlGaN 薄膜的生长温度，能减少 Mg 原子脱吸附并增强 Ga 原子的表面活性剂作用，从而提高 Mg 的掺杂浓度。 Furthermore, Mg-doping concentration can beincreased by appropriately decreasing the growth temperature of p-type AlGaN films, because lower temperature can reduce the desorption of Mg atoms and enhance the effect of Ga as a surfactant
42422 采用原位磷注入法合成了不同化学配比的磷化铟 ( InP) 多晶。 Indium phosphide (InP) polycrystals with different stoichiometric ratios were synthesizedby phosphorus in-situ injection method.
42423 分析了熔体温度、磷泡压力和环境压力对合成速率的影响; The effects of the melt temperature, phosphorus injector pressureand ambient pressure on the synthesis rate were analyzed.
42424 对不同化学配比的多晶样品进行霍尔测试和辉光放电质谱( GDMS) 测试，分析了影响 InP 多晶纯度的因素。 The polycrystal samples with different stoichiometric ratios were tested by Hall test and glow discharge mass spectrometry (GDMS) test, and theinfluence factors of InP polycrystal purity were analyzed.
42425 结果表明，合成时熔体温度为 1 353 ～ 1 370 K时，熔体呈富磷或者化学配比状态，熔体温度高于 1 370 K 或低于 1 353 K 时，熔体呈富铟状态; The results show that the melt is phosphorus-richor stoichiometric when the melt temperature is 1 353－1 370 K during synthesis, and the melt is indiumrich when the melt temperature is higher than 1 370 K or lower than 1 353 K.