ID 原文 译文
42406 综述了电致发光 ( EL) 、光致发光 ( PL) 、阴极荧光 ( CL) 、显微拉曼光谱和红外 ( IＲ) 热成像五种光学测试技术的基本原理和实验系统，以及近年来国内外利用相关光学测试技术分析 GaN HEMT 可靠性的研究进展。 The basic principles and experimental systems of electroluminescence (EL) , photoluminescence (PL) , cathodoluminescence (CL) , micro-Ｒaman spectroscopy and infrared (IＲ) thermography are introduced, and the recent research progresses on GaN HEMT reliability analysis using theseoptical measurement technologies are also reviewed.
42407 分析了五种光学测试技术的优势和局限性， Moreover, the advantages and limitations of these optical measurement technologies are summarized.
42408 与电学测试技术相比，光学测试技术可以确定缺陷的类型及空间位置。 Compared with electrical measurement technologies, theoptical ones can recognize types and locations of the defects.
42409 不同测试技术的相互补充将为 GaN HEMT 可靠性研究提供更加系统化的方案。 The combination of different measurementtechnologies will provide more systematic schemes for researches on the GaN HEMT reliability.
42410 通过在氧化铟锡 ( ITO) 薄膜上蒸镀金属 Al，获得 ITO/Al 复合透明导电薄膜，研究了不同退火条件下不同 Al 金属层厚度的复合透明导电薄膜的方块电阻和在紫外波段的透过率。 Indium tin oxide /aluminium (ITO/Al) composite transparent conductive films were obtained by evaporating Al metal on ITO films.The sheet resistance and ultraviolet band transmittance of thecomposite transparent conductive films with different Al metal thickness under different annealing conditions were studied.
42411 结果表明，在 ITO 薄膜上蒸镀 2 nm 厚的 Al 层，经 550 ℃ 退火后，金属 Al 在 ITO 薄膜上形成粒径约为 10 nm 的颗粒，增加了薄膜表面的粗糙度，得到的复合透明导电薄膜的方块电阻和在紫外波段透过率的综合性能最佳， It is proved that the method of evaporating of 2 nm Al layer on ITO films and annealing at 550 ℃ can produce Al particles of about 10 nm on the ITO films, and the obtained compositetransparent conductive films have the best comprehensive properties of sheet resistance and ultravioletband transmittance.
42412 在 360 ～ 410 nm 波长的平均透过率大于 95%，且方块电阻为22.8 Ω/□。 The average transmittance at the wavelength of 360－410 nm is greater than 95%, andthe sheet resistance is 22.8 Ω/□.
42413 采用 ITO/Al ( 100 nm /2 nm) 复合透明导电薄膜制备了 390 nm 紫外发光二极管( LED) 芯片 ( 尺寸为 325 μm×275 μm) ，与用 ITO 薄膜制备的 LED 芯片相比，其光电转换效率提升了约 3%，饱和电流提升了 15. 00%，饱和光功率提升了 15. 04%。 Compared with the LED chip prepared with ITO film, the 390 nmultraviolet light emitting diode (LED) normal chips (325 μm × 275 μm) were prepared with the ITO/Al(100 nm /2 nm) composite transparent conductive films, the photoelectric conversion efficiency of theLED increases by about 3%, and the saturation current increases by 15.00%, and the saturation opticalpower increases by 15.04%.
42414 研究结果表明，采用 ITO/Al 复合透明导电薄膜可有效提升紫外 LED 的光电性能。 The research results show that the photoelectric properties of ultravioletLEDs can be effectively improved by using ITO/Al composite transparent conductive films.
42415 采用分子束外延 ( MBE) 方法制备了高质量的高 Al 组分 AlGaN 薄膜，在室温下获得了 266 nm 波长的深紫外发光。 High quality and high Al-component AlGaN films were prepared by molecular beam epitaxy (MBE) method, and the deep ultraviolet emission at a wavelength of 266 nm at room temperaturewas obtained.