ID 原文 译文
42396 基于一款自主研发的 15 kV SiC IGBT 芯片，测量了芯片的静态特性，搭建了芯片的动态特性测试平台，测量了常温下该 15 kV SiC IGBT 芯片在2 000～9 000 V下的动态特性参数，包括开关时间和开关损耗， Based on a self-developed 15 kV SiC IGBT chip, the static characteristics of the chip were measured.A test platform for the dynamic characteristics of the chip was built, and the dynamic characteristicparameters of the self-developed 15 kV SiC IGBT chip at 2 000－9 000 V were measured at room temperature, including switching time and switching loss.
42397 分析了芯片开关特性参数与外接高压直流源电压的关系，为该型号IGBT 芯片性能的进一步改进、优化提供了实验支撑。 The relationship between switching characteristic parameters of the chip and external high voltage DC source voltage was analyzed to provide an experimentalsupport for the further improvement and optimization for the performance of this type of IGBT chip.
42398 为提高激光雷达系统的探测距离和空间探测精度，并减少其体积及成本，研制了一款16 线集成窄脉冲半导体激光器模块，该模块主要包括高密度排列的激光器芯片、集成驱动电路及光电混合集成封装结构。 In order to improve the detection distance and space detection accuracy of a lidar systemand reduce its volume and cost, a 16-line integrated narrow pulse semiconductor laser module includinghigh density array of laser chips, integrated driving circuit and optical-electric hybrid integrated packaging structure was developed.
42399 采用三层发光纳米堆叠激光器芯片及高精度贴片工艺实现 16 线激光器贴装; The three-layer light-emitting nano stacked laser chip and high-precision patchtechnology were adopted to realize the assembly of the 16-line laser.
42400 采用结电容和开关损耗较小的新型 GaN 功率器件实现窄脉冲驱动电路; A new type of GaN power device wasadopted in the narrow pulse drive circuit due to its smaller junction capacitance and smaller switching loss.
42401 将激光器芯片与电路封装在同一管壳内，减小分布电感; The laser chip and the circuit were encapsulated in the same shell to reduce the distributed inductance.
42402 采用能量压缩技术实现了 16 线单独可控，获得了高功率 ( 70 W) 、窄脉冲 ( 6 ns) 和低功耗 ( 4 W) 的优良性能。 Byusing the energy compression technology, the laser module is 16-line individually controllable and achievesexcellent performances of high power (70 W) , narrow pulse (6 ns) and low power consumption (4 W) .
42403 与传统采用分立式器件的激光雷达系统相比，该模块能够将系统探测距离和空间探测精度均提高将近 50%。 Compared with the conventional lidar system which uses discrete devices, the detection distance and spacedetection accuracy of the lidar system used the module are improved by nearly 50%.
42404 氮化镓 ( GaN) 高电子迁移率晶体管 ( HEMT) 具有高工作电压、大功率密度、高截止频率等特点，被广泛应用于微波射频领域。 GaN high electron mobility transistors (HEMTs) are widely used in microwave and radiofrequency fields due to their crucial properties including high operating voltage, high power density andhigh cut-off frequency.
42405 然而 GaN 材料内部的结构缺陷降低了 GaN HEMT的可靠性，因此研究器件的结构缺陷对于提升其可靠性具有重要意义。 However, structural defects existing inside the GaN material decrease thereliability of GaN HEMTs.Therefore, it is important to study the structural defects in devices to improvethe device reliability.