ID 原文 译文
42386 对加入不同类型的表面活性剂复配后对颗粒的去除及其作用机理进行了分析和预测。 After compoundeddifferent types of surfactant, the particle removal and its effect mechanism are analyzed and predicted.
42387 相比于在清洗液中加入单一的表面活性剂，使用不同类型的表面活性剂按合适比例复配后会产生协同效应，因此能获得更好的颗粒去除效果。 Itis considered that compared with adding a single surfactant in the cleaning solution, the synergistic effectwill be produced when different types of surfactants are compounded in proper proportion, so the betterparticle removal effect can be obtained.
42388 通过氧等离子体处理工艺，在 AlGaN/GaN 异质结构上制备了肖特基二极管。 Schottky diodes were fabricated on AlGaN/GaN heterostructure by oxygen plasma treatment process.
42389 基于正向电流－电压特性和双二极管模型，对 AlGaN/GaN 异质结构的肖特基势垒高度和理想因子进行了计算和分析。 Based on the forward current-voltage characteristics and the double-diode models, theSchottky barrier height and ideal factor of AlGaN/GaN heterostructure were calculated and analyzed.
42390 采用氧等离子体处理的肖特基二极管，其理想因子由 4. 7 下降到 1. 45，势垒高度由 0. 8 eV 提高到 1. 057 eV，反向漏电流降低了约两个数量级。 For the Schottky diodes treated with oxygen plasma, the ideal factor value decreases from 4.7 to 1.45, andthe barrier height increases from 0.8 eV to 1.057 eV.
42391 经氧等离子体处理制备的 AlGaN/GaN 肖特基二极管具有较高的势垒高度，抑制了垂直隧穿， The reverse leakage current of AlGaN/GaN Schottky diode is reduced by about two orders of magnitude.The AlGaN/GaN Schottky diodes treated byoxygen plasma have a high barrier height, which restrain the vertical tunneling.
42392 同时氧等离子体处理对肖特基接触金属下方和附近的表面陷阱还起到钝化作用，从而降低了陷阱辅助隧穿。 The oxygen plasma treatment has passivated the surface traps under and near the Schottky contact metal, thus reducing the trapassisted tunneling.
42393 氧等离子体处理工艺为制备理想的肖特基二极管提供了一种有效的方法。 The oxygen plasma treatment process provides an effective method for the preparationof an ideal Schottky diode.
42394 与传统的硅基器件相比，碳化硅绝缘栅双极型晶体管 ( SiC IGBT) 具有更小的导通电阻、更高的耐受电压以及更快的开关速度。 Compared with conventional silicon-based devices, silicon carbide insulated gate bipolartransistors (SiC IGBTs) have smaller on-resistance, higher withstand voltage, and faster switching speed.
42395 由于这些优异的特性，SiC IGBT 在电力行业有较大的市场需求。 Due to these excellent characteristics, the market demand for SiC IGBTs in the electric power industry isgreat.