ID 原文 译文
42376 三倍频器使用两个以串联结构集成 4 个肖特基结的二极管芯片实现平衡式倍频模式; The tripler used two GaAs Schottky diode chips in a balanced configuration, each chip integrated four Schottky junctions in a series configuration.
42377 220 GHz 分谐波混频器使用一对反向并联结构的 GaAs 肖特基二极管实现混频功能。 The 220 GHz sub-harmonicmixer used an anti-parallel pair of GaAs Schottky diodes to realize the mixing function.
42378 室温下输入功率为 100 mW，三倍频器在90 ～110 GHz 频带范围内功率效率超过 5%; The test resultsshow that power efficiency of the tripler is more than 5% in the frequency range of 90 － 110 GHz for100 mW input power at room temperature.
42379 当本振动率为 4 mW 时，谐波混频器在 200～220 GHz频带内变频损耗小于 9 dB。 In the frequency range of 200－220 GHz, the conversion loss ofthe mixer is less than 9 dB when the local oscillator power is 4 mW.
42380 接收前端的单个通道通过上机测试，成像性能良好。 Each single channel of the receiverfront-end demonstrates high performance on imaging when it is used in a testing imaging system.
42381 该接收前端尺寸为 40 mm×38 mm×26 mm，可广泛应用于各种毫米波成像检测系统。 The size ofthe receiver front-end is 40 mm×38 mm×26 mm, and it can be widely used in various millimeter-wave imaging detection systems.
42382 在集成电路制造过程中，利用化学机械抛光 ( CMP) 去除多余的 Cu 以实现全局及局部平坦化。 During the integrated circuit manufacturing process, chemical mechanical polishing(CMP) is used to remove the excess Cu for global and local planarization.
42383 而 CMP 后会在晶圆表面残留大量颗粒等污染物，抛光后残留的颗粒等污染物需要通过 CMP 后清洗工艺将其去除。 However, a large amount ofparticles and other contaminants remain on the wafer surface after CMP, and the particles and contaminants need to be removed by post-CMP cleaning process.
42384 综述了清洗液中的表面活性剂对颗粒去除的作用机理及清洗效果。 The mechanism and cleaning effect of surfactantin the cleaning solution on particle removal are summarized.
42385 重点探讨了在清洗液中加入单一表面活性剂的作用机理和对颗粒的去除效果。 The mechanism of adding a single surfactantto the cleaning solution and the effect of removing particles are emphatically discussed.