ID 原文 译文
42366 当电镀工艺目标镀层厚度为 4 μm 时，晶圆双面镀层厚度均匀性可控制在 5%以内。 When the coating thickness is 4 μm during the electroplating process, the uniformity of thedouble-sided coating thickness of the wafer can be controlled within 5%.
42367 实验结果表明，晶圆双面挂镀设备即可满足晶圆双面同时电镀，也可满足高端芯片封装对镀层厚度均匀性的要求。 The experiment results show that the double-sided wafer hanging electroplating equipment can meet the requirements of both the double-sided wafer electroplating at the same time and the uniformity of coating thickness for the high-endchip packaging.
42368 在减少清洗液对晶圆表面腐蚀的前提下，尽可能地去除表面残留的苯并三唑 ( BTA)是 Cu 互连化学机械抛光 ( CMP) 后清洗的研究重点。 While reducing the corrosion caused by the cleaning solution, removing benzotriazole(BTA) as much as possible from the surface of the wafer is the research focus for post chemical mechanical polishing (CMP) cleaning of Cu interconnection.
42369 选择了两种非离子表面活性剂聚乙二醇辛基苯基醚 ( Triton X-100) 和脂肪醇聚氧乙烯醚 ( AEO-20) 与质量分数为 0. 02%的 FA/OⅡ螯合剂复配成碱性清洗剂， Two kinds of nonionic surfactants (Triton X-100and AEO-20) were mixed with the FA/O Ⅱ chelating agent of 0.02% mass fraction into alkaline cleaning solution.
42370 研究其对 Cu 表面 BTA 的去除效果，对其作用机理进行了分析。 The removal effect of BTA on Cu surface and the removal mechanism were also analyzed.
42371 接触角和电化学测试结果表明，两种清洗剂均改善了 Cu 表面 Cu-BTA 的去除效果。 The results of contact angle and electrochemical measurements show that both of the two compoundcleaning solutions improve the removal efficiency of Cu-BTA on Cu surface.
42372 其中 FA/OⅡ螯合剂与质量分数为 0. 22%的 Triton X-100 复配清洗 Cu 表面后，接触角降为 37. 75°，腐蚀电流密度增大到 2. 424×10－6 A/cm2; When the FA/O Ⅱ chelatingagent is mixed with the Triton X-100 of 0.22% mass fraction into the compound cleaning solution to cleanthe Cu surface contaminated by BTA, the contact angle decreases to 37.75° and the corrosion currentdensity increases to 2.424×10－6 A/cm2.
42373 与质量分数为 0. 25%的 AEO-20 复配清洗 Cu 表面后，接触角降为 32. 5°，腐蚀电流密度增大到 2. 657×10－6 A/cm2; When the FA/OⅡ chelating agent is mixed with the AEO-20 of 0.25% mass fraction into compound cleaning solution to clean the Cu surface contaminated by BTA, thecontact angle decreases to 32.5° and the corrosion current density increases to 2.657×10－6 A/cm2.
42374 当 AEO-20 与 FA/OⅡ复配清洗液 pH 值为 10. 5 时，几乎不影响 BTA 的去除效果，但 Cu 表面的粗糙度降至 5. 59 nm。 When the pH value of the compound cleaning solution of AEO-20 and FA/OⅡis 10.5, the removal effect ofBTA is almost unaffected, and the surface roughness of Cu reduces to 5.59 nm.
42375 基于 GaAs 肖特基二极管，研制了 1×4 多像素 220 GHz 线阵列被动接收前端，接收前端的每个接收通道包含一个 W 波段三倍频器和一个 220 GHz 分谐波混频器。 Based on the GaAs Schottky diode, a 1×4 multi-pixel 220 GHz linear array passive receiver front-end was developed, each receiving channel of which contained a W-band tripler and a220 GHz sub-harmonic mixer.