| ID | 原文 | 译文 |
| 42336 | 然后，综述了在 Si、塑料、GaN、GaAs、Si 纳米线、蓝宝石、SiO2 /Si 和 SiC 等不同衬底上制备层状 MoS2 薄膜的方法， | Then, the methods of layered MoS2 thin films prepared on different substrates such as Si, plastics, GaN, GaAs, Si nanowires, sapphire, SiO2 /Si and SiC are reviewed. |
| 42337 | 利用原子力显微镜、X 射线衍射、拉曼光谱、X 射线光电子能谱等测试方法对各衬底上制备的 MoS2 薄膜结构和性能进行了表征; | The structures and properties of MoS2 thin films prepared on different substrates were characterized byusing atomic force microscopy, X-ray diffraction, Ｒaman spectroscopy and X-ray photoelectron spectroscopy. |
| 42338 | 同时讨论了相应的异质结器件的特性及应用， | The characteristics and applications of the layered MoS2 heterojunction devices are discussed. |
| 42339 | 并对高质量 MoS2 薄膜在光电探测器、气体传感器、压电器件等光电子和纳电子器件中的应用进行了展望。 | The applications of high quality MoS2 thin films in optoelectronic and nano-electronic devices such as photodetectors, gas sensors and piezoelectric devices are prospected. |
| 42340 | 采用磁控溅射法在氧化铟锡 ( ITO) 导电玻璃衬底上制备 InN 薄膜， | InN thin films were prepared on indium tin oxide (ITO) conductive glass substrates byusing magnetron sputtering technology. |
| 42341 | 研究了氮气体积分数对 InN 薄膜晶体结构、表面形貌和光电特性的影响。 | The effects of nitrogen volume fraction on the crystal structure, surface morphology and photoelectric properties of InN thin films were investigated. |
| 42342 | X 射线衍射测试结果表明，所制备的 InN 薄膜均为六方纤锌矿结构， | The X-ray diffractiontest results show that all InN thin films exhibit hexagonal wurtzite structure. |
| 42343 | 且随着氮气体积分数的增加，InN 薄膜由沿 ( 101) 面择优生长逐渐变为沿 ( 002) 面择优生长。 | With the increase of nitrogenvolume fraction, the preferred growth for as-grown InN thin films gradually changed from (101) plane to(002) plane. |
| 42344 | 原子力显微镜结果表明，随着氮气体积分数的增加，InN 薄膜表面粗糙度逐渐减小。 | The atomic force microscope results show that the surface roughness of InN thin films decreases gradually with the increase of nitrogen volume fraction. |
| 42345 | 此外，通过光致发光谱和光学吸收谱测得氮气体积分数为100%时制备的 InN 薄膜禁带宽度分别为 1. 45 eV 和 1. 47 eV。 | In addition, the band gap values of InN thinfilms measured by photoluminescence and optical absorption spectra were 1.45 eV and 1.47 eV, respectively, under the nitrogen volume fraction of 100%. |